Abstract:Transition metal (TM)-doped dilute magnetic semiconductors (DMS) have emerged as promising materials for spintronic applications such as spin-polarized transport and information storage. However, achieving robust room-temperature ferromagnetism in DMS remains a key challenge. This work undertakes a comprehensive investigation of the effects of Ti- and Cr-doping and (Ti,Cr)-codoping on the structural, electronic, and magnetic properties of wurtzite ZnS using first-principles pseudopotential plane-wave self-consistent field calculations and Monte Carlo simulations. The first-principles DFT calculations were performed using the spin-polarized GGA+U approach to account for strong electron–electron interactions. Structural relaxations revealed expanded lattice parameters and bond lengths for the doped systems compared to pure ZnS, attributed to the larger ionic radii of the dopants. Formation energy calculations confirmed the thermodynamic stability of doping. The band structure and density of states analysis demonstrated the half-metallic nature of the doped ZnS systems with 100% spin polarization induced by strong hybridization between the TM-3d and S-3p states. This mediates robust ferromagnetic coupling, with total magnetic moments around 4-8 μB /cell depending on dopant type and concentration. To complement the zero-temperature DFT results, temperature-dependent Monte Carlo simulations using the single-spin flip Heat Bath algorithm were implemented. The modeling of magnetization, susceptibility, specific heat, and hysteresis loops enabled extracting Curie temperatures up to 427.6 K for 12.5% Cr-doped ZnS. The synergistic combination of first-principles DFT and Monte Carlo computational techniques provides significant insights into tailoring the magnetic properties of TM-doped ZnS dilute magnetic semiconductors. The tunability of structural, electronic, and magnetic characteristics through control of dopant selection and concentration demonstrates the promising potential of transition metal-doped ZnS for spintronic devices operable at room-temperature.

Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers Via Copper Atomic Intercalation

Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

Extrinsic n-type semiconductor transition in ZrSe2 with the metallic character through hafnium substitution

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation

Synthesis and Semiconducting Behavior of Zr (cu, Fe) Se2− Single Crystals

Band Structure Tailoring in ZrSe2 Single Crystal Via Trace Rhenium Intercalation

Electronic Structures of Cr-Intercalated ZrTe2 Revealed by Angle-Resolved Photoemission Spectroscopy

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$

Electronic Structures of Cr-Intercalated ZrTe<sub>2</sub> Revealed by Angle-Resolved Photoemission Spectroscopy

Direct Observation of Semiconductor-Metal Phase Transition in Bilayer Tungsten Diselenide Induced by Potassium Surface Functionalization.

Semiconductor-metal phase transition and emergent charge density waves in 1T-ZrX$_2$ (X = Se, Te) at the two-dimensional limit

Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3.

Semiconductor–Metal Phase Transition and Emergent Charge Density Waves in 1 T -ZrX 2 (X = Se, Te) at the Two-Dimensional Limit

First-principles Study on Doping of Tetragonal ZnSe Monolayers

Semiconductor-Metal Phase Transition and Emergent Charge Density Waves in 1T-Zrx2 (X = Se, Te) at the Two-Dimensional Limit.

Modulating the optoelectronic characteristics of ZnS through transition metals doping: insights from density functional theory

Effect of Zn-Doping on the Phase Transition Behavior and Thermoelectric Transport Properties of Cu2Se

First-Principles Calculations to Investigate Electronic and Magnetic Behaviors of Zr and Nb Transition Metals Doped Zinc-Blende MgSe Compound

Van der Waals stacking of multilayer In2Se3 with 2D metals induces transition from Schottky to Ohmic contact

Tuning the magnetic properties of doped ZnS using transition metal doping: A multi-scale computational approach