Abstract:Copper (Cu) has been widely used as interconnect materials in semiconductor industry, due to its advantages of high electrical, thermal conductivities, good electro-migration resistance and low cost. Since Cu is very reactive, contamination like physical diffusion from Cu to silicon (Si) and the chemical combination between Cu and Si is commonly observed and detrimental for Si semiconductor devices. Besides experimental study of the interaction between Cu and Si at macro scale, the physical diffusion and chemical combination also need to be understood at atomic level. Based on density functional theory (DFT), a crystal structure of Cu/Si heterojunction has been established to study the Cu/Si interfacial diffusion mechanism, including the diffusibility of vacancy and interstitial diffusion. No energy barrier exists when vacancy located at the top site, and diffusion from outside to bridge site is also possible by overcoming a relative low energy barrier. The occurrence of interstitial diffusion is also proved, but the energy barrier is higher than that of vacancy diffusion. The deeper of interstitial diffusion, more energy is required to overcome the increased energy barrier. In terms of first-principles study of chemical combination, complexes of Cu and Si have been structuralized in trigonal, hexagonal and tetragonal crystals. Stability of the crystal structures has been investigated from the aspect of mechanical and lattice stability. Tetragonal Cu3Si is proved to be the only crystal structure with both mechanical and lattice stabilities. The elastic constants, electronic structure and thermodynamical properties of the stable Cu3Si are also revealed. The results indicate the tetragonal Cu3Si exhibits metallic behaviors with good thermodynamical properties. The current study could provide meaningful insights on the inhabitation of Cu contamination and performance improvement.

Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3.

Modulation of electronic state in copper-intercalated 1T-TaS 2

High-density Chemical Intercalation of Zero-Valent Copper into Bi2Se3 Nanoribbons.

Precision Control of Amphoteric Doping in CuxBi2Se3 Nanoplates

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

First-principles Study of Copper Contamination in Silicon Semiconductor

Electrochemical control over stoichiometry via cation intercalation into Chevrel-phase sulphides (CuxMo6S8, x = 1–3)

Chemical intercalation of heavy metal, semimetal, and semiconductor atoms into 2D layered chalcogenides

Chemical Intercalation of Zerovalent Metals into 2d Layered Bi2se3 Nanoribbons

Crystal Structure Design and Synthesis of Noncentrosymmetric Superconductors in Intercalation-Induced Transition Metal Dichalcogenides.

Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers Via Copper Atomic Intercalation

ChemInform Abstract: High‐Density Chemical Intercalation of Zero‐Valent Copper into Bi2Se3 Nanoribbons.

Copper migration and surface oxidation of $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$ in ambient pressure environments

Metastable tetragonal Cu2Se hyperbranched structures: large-scale preparation and tunable electrical and optical response regulated by phase conversion.

Factors Controlling Intercalation of Metal Atoms into WS 2 : Implications for Electronically Tunable Semiconductors

Direct Tuning of Electrical Properties in Nano-Structured Bi2Se0.3Te2.7 by Reversible Electrochemical Lithium Reactions

Controlling the Thermal Stability, Threshold Voltage, and Thermoelectric Properties of Cuprous Sulfide Thermoelectrics.

Electron Delocalization and Relaxation Behavior in Cu-Doped Bi2se3 Films

Probing electrode/electrolyte interface during intercalation of Cu into Te

Atomic-scale Chemical Mapping of Copper Dopants in Bi2Te2.7Se0.3 Thermoelectric Alloy

Kinetically-Driven Phase Transformation During Lithiation in Copper Sulfide Nanoflakes.