Copper migration and surface oxidation of $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$ in ambient pressure environments

Adam L. Gross,Lorenz Falling,Matthew C. Staab,Metzli I. Montero,Rahim R. Ullah,David M. Nisson,Peter Klavins,Kristie J. Koski,Nicholas J. Curro,Valentin Taufour,Slavomir Nemsak,Inna M. Vishik
DOI: https://doi.org/10.48550/arXiv.2207.04155
2022-07-08
Mesoscale and Nanoscale Physics
Abstract:Chemical modifications such as intercalation can be used to modify surface properties or to further functionalize the surface states of topological insulators. Using ambient pressure X-ray photoelectron spectroscopy, we report copper migration in $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$, which occurs on a timescale of hours to days after initial surface cleaving. The increase in near-surface copper proceeds along with the oxidation of the sample surface and large changes in the selenium content. These complex changes are further modelled with core-level spectroscopy simulations, which suggest a composition gradient near the surface which develops with oxygen exposure. Our results shed light on a new phenomenon that must be considered for intercalated topological insulators$\unicode{x2014}$and intercalated materials in general$\unicode{x2014}$that surface chemical composition can change when specimens are exposed to ambient conditions.
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