Abstract:Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

Chemical Interactions at the Interface of Au on Bi 2 Se 3 Topological Insulator

Chemical Interactions at the Interface of Au on Bi2Se3 Topological Insulator

Chemical Instability of an Interface Between Silver and Bi2Se3 Topological Insulator at Room Temperature

Growth, morphology and stability of Au in contact with the Bi2Se3(0 0 0 1) surface

Growth, Morphology and Stability of Au in Contact with the Bi2Se3(0001) Surface

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

The Interface Between Pt and Bi2Se3: Instability and Formation of a New Ordered Phase

Superconductivity at Pd/Bi2Se3 Interfaces Due to Self-Formed PdBiSe Interlayers

Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi 2 Se 3

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Interplay between topological insulators and superconductors

Scanning Probe Microscopy Induced Surface Modifications of the Topological Insulator Bi2Te3 in Different Environments

Unveiling Electric Field Induced Ultrafast Charge Transfer Dynamics and Photoresponse Enhancement in Gold‐Interlayered Bi2Se3

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Copper migration and surface oxidation of $\text{Cu}_{x}\text{Bi}_2\text{Se}_3$ in ambient pressure environments

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated Via Quasi-Particle-Interference Mapping

Revelation of Topological Surface States in Bi2Se3 Thin Films by in Situ Al Passivation.

Topological Surface State Evolution in Bi_2Se_3 Via Surface Etching

Topological Surface State Evolution in Bi$_2$Se$_3$ via Surface Etching

Topological Surface State Evolution in Bi2Se3 via Surface Etching