Abstract:Studying the dielectric response of topological insulators (TIs) can unveil their unique physical mechanisms such as charge transport and spin-orbit coupling effects. However, due to the manifestation of material's topological nature and band structure primarily in nanofilm, such thickness poses challenges for dielectric testing. To date, research on TI dielectric aspects remains relatively unexplored. Therefore, this paper successfully synthesizes nanofilm of quaternary topological insulator Bi1·2Sb0·8Te0·4Se2.6 (BSTS) using laser molecular beam epitaxy (LMBE) technique. Utilizing a wide-frequency dielectric spectrometer and a comprehensive physical properties measurement system (PPMS), we measured and thoroughly analyzed the dielectric polarization and charge transport characteristics of BSTS. We observed various polarization responses in the frequency range of 101-103 Hz, with the dipole orientation gradually failing to keep pace with the frequency increase in the range of 103-105 Hz, and the relaxation polarization unable to establish itself in the range of 105-107 Hz, with polarization primarily contributed by displacement polarization. Subsequently, we further analyzed the dependence of BSTS dielectric polarization response on temperature and film thickness, which will help reveal the influence of external factors on TI dielectric response, providing crucial insights for controlling TI materials' dielectric response. This not only deepens our understanding of the fundamental physical properties of this novel material but also offers important scientific basis and technological support for its applications in quantum computing, photonics, spintronics, and other fields.

Scanning Probe Microscopy Induced Surface Modifications of the Topological Insulator Bi2Te3 in Different Environments

Annealing-Induced Bi Bilayer on Bi2Te3 Investigated Via Quasi-Particle-Interference Mapping

Study of the Surface and Bulk States of Bi2Te3 Topological Insulators Using Terahertz Time-Domain Spectroscopy

Challenges of Topological Insulator Research: Bi2Te3 Thin Films and Magnetic Heterostructures

Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

In Situ Raman Spectroscopy of Topological Insulator Bi2Te3 Films with Varying Thickness

Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films

Recovery of Surface State Bands after Desorption of Te Capping Layer on (bi1−x Sb X )2te3 Ternary Topological Insulators

Electronic structures of topological insulator Bi2Te3 surfaces with non-conventional terminations

Study of dielectric polarization and electrical transport in Bi1·2Sb0·8Te0·4Se2.6 nanofilms

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Micro-metric Electronic Patterning of a Topological Band Structure Using a Photon Beam

Band Structure of Topological Insulator BiSbTe1.25Se1.75

Revelation of Topological Surface States in Bi2Se3 Thin Films by in Situ Al Passivation.

Robustness of Topological Order and Formation of Quantum Well States in Topological Insulators Exposed to Ambient Environment

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 Via Surface Modification

Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films