Abstract:Publication date: 29 July 2022 Source: Solid State Phenomena Vol. 335 Author(s): Ibtissam Guesmi, Allal Challioui, Larbi El Farh, Siham Malki, Zakariae Darhi The Electronic and optical properties of zirconium dichalcogenides (ZrS2,ZrSe2, andZrTe2),have been explored via ab-initio methods based on the density functionaltheory (DFT) within the frame of generalized gradient approximation (GGA) and a couplingtechnique between the plane wave (PW) and the pseudo-potential (PP) approaches. Theobtained results showed that ZrS2 and ZrSe2 are semiconducting materials with energy gapsof 1.15 eV and 0.3 eV respectively from the valence band maximum located at G point andthe conduction band minimum located at L point, while ZrTe2 showed a metallic characterwith a density of states at the Fermi level of about 0.8 states/eV. Based on a Kramers–Kroniganalysis of the reflectivity, we have obtained the spectral dependence of the real andimaginary parts of the complex dielectric function (ε1 and ε2, respectively) and the refractiveindex (n). The collected data were used for the calculation of absorption coefficient,reflectivity index, conductivity, and electron energy loss function of ZrS2, ZrSe2, and ZrTe2 forradiation up to 20 eV. All three chalcogenides were found to be good absorbers of ultravioletradiation. The reflectivity of ZrS2 is low in the visible and near-ultraviolet region butincreases sharply for higher photon energies and approaches 96% at ~18.5 eV. The R(ω) spectrum of ZrTe2, on the other hand, is non-selective and remains above 50% over a widerange of energies from infrared to ultraviolet which suggeststhe potential application of thismaterial as an effective solar reflector. On the other hand, the refractive indices of ZrS2, ZrSe2,and ZrTe2 in the visible range are high. The optical spectra show moderate anisotropy concerning the electric field polarization of the incident light.

Electronic and Crystal Structure of New Cr x ZrSe 2 Intercalation Compounds

Synthesis and Semiconducting Behavior of Zr (cu, Fe) Se2− Single Crystals

Crystal Structure and Electronic Properties of New Compound Zr6.5Pt6Se19

Electronic structure of ZrX2 (X = Se, Te)

Electronic Structures of Cr-Intercalated ZrTe<sub>2</sub> Revealed by Angle-Resolved Photoemission Spectroscopy

Electronic Structures of Cr-Intercalated ZrTe2 Revealed by Angle-Resolved Photoemission Spectroscopy

Transition from Semimetal to Semiconductor in ZrTe2 Induced by Se Substitution

Band Structure Tailoring in ZrSe2 Single Crystal Via Trace Rhenium Intercalation

First-principles study of the structure, electronic and optical properties of monolayer ZrX3 (X = S, Se, Te)

Solvothermal Synthesis, Structure and Physical Properties of Cs[Cr(en)2MSe4] (M = Ge, Sn) with [Mse4](4-) Tetrahedra As Chelating Ligand.

Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals

A DFT study of structural, optical, and elastic properties of the transition metal chalcogenide compounds SrXSe3 (X = Ti or Zr)

Study of the Structural, Electronic and Optical Properties of 1T-ZrX2 Materials (X=S, Se, Te)

Investigation on the crystal structure and mechanical properties of the ternary compound Mg11-xZnxSr combined with experimental measurements and first-principles calculations

New Layered Zirconium Tellurides: Zr(0.30)ZrTe(2), Zr(0.29)Zr(2)Te(2)As, and NaZr(2)Te(2)As

Exchange interactions and Curie temperatures in Cr-based alloys in Zinc Blende structure: volume- and composition-dependence from first-principles calculations

Growing crystals and studying structure and electronic properties of Cu2ZnGe(SхSe1-x)4 compositions

Structure And Physical Properties Of Csv2se2-Xo And V2se2o

M ar 2 01 8 Structures and Physical Properties of CsV 2 Se

Electron-Doping Induced Semiconductor to Metal Transitions in ZrSe2 Layers Via Copper Atomic Intercalation

Structural phase transitions, mechanical and electronic properties of Zr Se 2 under high pressures via the first-principles calculations