Structure And Physical Properties Of Csv2se2-Xo And V2se2o

Hai Lin,Jin Si,Xiyu Zhu,Kehan Cai,Hao Li,Lu Kong,Xiaodong Yu,Hai-Hu Wen
DOI: https://doi.org/10.1103/PhysRevB.98.075132
IF: 3.7
2018-01-01
Physical Review B
Abstract:By using solid-state reactions, we successfully synthesize new oxyselenides CsV2Se2-x O (x = 0, 0.5). These compounds containing V2O planar layers with a square lattice crystallize in the CeCr2Si2C structure with the space group of P4/mmm. Another new compound, V2Se2O, which crystallizes in space group I4/mmm is fabricated by topochemical deintercalation of cesium from CsV2Se2O powder with iodine in tetrahydrofuran. Resistivity measurements show a semiconducting behavior for CsV2Se2O, while a metallic behavior for CsV2Se1.5O, and an insulating feature for V2Se2O. A charge-or spin-density-wave like anomaly has been observed at 168 K for CsV2Se2O and 150 K for CsV2Se1.5O, respectively. These anomalies are also confirmed by the magnetic susceptibility measurements. The resistivity in V2Se2O exhibits an anomalous log(1/T) temperature dependence, which is similar to the case in parent phase or very underdoped cuprates indicating the involvement of strong correlation. Magnetic susceptibility measurements show that the magnetic moment per V site in V2Se2O is much larger than that of CsV2Se2-xO, which again suggests the correlation-induced localization effect in the former.
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