Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Large-Size Superlattices Synthesized by Sequential Sulfur Substitution-Induced Transformation of Metastable MoTe2

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Morphology Engineering in Monolayer MoS2‐WS2 Lateral Heterostructures

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Self-assembly of 1T/1H Superlattices in Transition Metal Dichalcogenides

Intercalation-Induced Disintegrated Layer-by-Layer Growth of Ultrathin Ternary Mo(Te1-xSx)2 Plates.

Structural Evolution of Atomically Thin 1t’‐mote2 Alloyed in Chalcogen Atmosphere

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Synthesis of tunable $SnS-TaS_2$ nanoscale superlattices

Large-area synthesis of continuous two-dimensional MoTexSe2-x alloy films by chemical vapor deposition

Hydrogen-assisted Post-Growth Substitution of Tellurium into Molybdenum Disulfide Monolayers with Tunable Compositions

Metastable 1T′-phase group VIB transition metal dichalcogenide crystals

Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Single-layer Mo 5 Te 8 ― A new polymorph of layered transition-metal chalcogenide

Selective Selenium-Substituted Metallic MoTe2 Toward Ternary Atomic Layers with Tunable Semiconducting Character

Anisotropic Ordering in 1T' Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulfur and Selenium

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals