Abstract:Single-crystal transition metal dichalcogenides (TMDs) and TMD-based heterojunctions have recently attracted significant research and industrial interest owing to their intriguing optical and electrical properties. However, the lack of a simple, low-cost, environmentally friendly, synthetic method and a poor understanding of the growth mechanism post a huge challenge to implementing TMDs in practical applications. In this work, we developed a novel approach for direct formation of high-quality, monolayer and few-layer MoS2 single crystal domains via a single-step rapid thermal processing of a sandwiched reactor with sulfur and molybdenum (Mo) film in a confined reaction space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically evidenced by analyzing the surface potential and morphology mapping. Compared with the conventional chemical vapor deposition approaches, our method involves no complicated gas-phase reactant transfer or reactions and requires very small amount of solid precursors [e.g., Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor, no complex equipment design, thereby facilitating a simple, low-cost, and environmentally friendly growth. Moreover, we examined the symmetry, defects, and stacking phase in as-grown MoS2 samples using simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging. For the first time, we observed that the SFG (peak intensity/position) polarization can be used as a sensitive probe to identify the orientation of TMDs' crystallographic axes. Furthermore, we fabricated ferroelectric programmable Schottky junction devices via local domain patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications. Our strategy thus provides a simple, low-cost, and scalable path toward a wide variety of TMD single crystal growth and novel functional device design.

Intercalation-Induced Disintegrated Layer-by-Layer Growth of Ultrathin Ternary Mo(Te1-xSx)2 Plates.

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Preparation of Single-Layer MoS(2x)Se2(1-x) and Mo(x)W(1-x)S2 Nanosheets with High-Concentration Metallic 1T Phase.

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Large-Size Superlattices Synthesized by Sequential Sulfur Substitution-Induced Transformation of Metastable MoTe2

High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method

A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals

Large Area, Phase-Controlled Growth of Few-Layer, Two-Dimensional MoTe2and Lateral 1T′–2H Heterostructures by Chemical Vapor Deposition

Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures

Morphological Evolution of Monolayer MoS2 Single-Crystalline Flakes

Growth of Transition Metal Dichalcogenides by Solvent Evaporation Technique

Robust synthesis of two-dimensional metal dichalcogenides and their alloys by active chalcogen monomer supply

Very Large-Sized Transition Metal Dichalcogenides Monolayers from Fast Exfoliation by Manual Shaking

Cm2 Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control David

Growth of MoS(2(1-x))Se(2x) (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Structural Evolution of Atomically Thin 1t’‐mote2 Alloyed in Chalcogen Atmosphere