Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Ya Deng,Peiling Li,Chao Zhu,Jiadong Zhou,Xiaowei Wang,Jian Cui,Xue Yang,Li Tao,Qingsheng Zeng,Ruihuan Duan,Qundong Fu,Chao Zhu,Jianbin Xu,Fanming Qu,Changli Yang,Xiunian Jing,Li Lu,Guangtong Liu,Zheng Liu
DOI: https://doi.org/10.48550/arXiv.2107.09482
2021-07-20
Abstract:Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2 and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy (STEM). Importantly, two different transport behaviors including superconducting and Weyl semimetal (WSM) states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and shed light on the design of device with topological multicomponent TMDCs materials.
Materials Science
What problem does this paper attempt to address?