Tunable photoelectric properties of monolayer Mo1- x W x Te2 alloys: a first-principles study

Mohan Gao,Zhenhua Wang,Jinchao Ma,Haowen Jiang,Yuanyuan Fu,Suifeng Huo,Hui Zhang,Chen Wu,Kan Chai,Guangju Ji
DOI: https://doi.org/10.1039/d4ra04653f
2024-09-30
Abstract:Monolayer MoTe2 and WTe2 within the two-dimensional transition metal dichalcogenides (TMDCs) material family exhibit broad potential for application in optoelectronic devices owing to their direct band gap characteristics. In this work, upon alloying these materials into a monolayer system denoted as Mo1-x W x Te2, intriguing alterations are observed in the electronic and optoelectronic properties. The photoelectric attributes of these alloys can be tailored by manipulating the respective ratios of molybdenum to tungsten (Mo/W). This investigation employs first-principles calculations based on density functional theory (DFT) to assess physical traits of two-dimensional monolayered structures composed from varying compositions of Mo1-x W x Te2. Our findings reveal that while maintaining a direct band gap characteristic across all compositions studied, there is also a reduction observed in electron effective mass near the Fermi level. Moreover, changing in the Mo/W ratio allows gradual adjustments in electronic properties such as density of states (DOS), work function, dielectric function, absorptivity, and reflectivity. Phonon dispersion curves further demonstrate the stability of Mo1-x W x Te2 systems. Notably, Mo0.5W0.5Te2 exhibits lower polarizability and reduced band gap when compared against MoTe2 and WTe2 counterparts. This research underscores how alloying processes enable customizable modifications in the electronic and optoelectronic properties of Mo1-x W x Te2 monolayer materials which is essential for enhancing nanoscale electronic and optoelectronic device design.
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