The Mirizzi syndrome: a cause of common bile duct obstruction.

F. Palmer,G. Goldin

DOI: https://doi.org/10.1111/J.1440-1673.1984.TB02467.X

1984-02-01

Australasian Radiology

Abstract:

What problem does this paper attempt to address?

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Zhepeng Zhang,Xujing Ji,Jianping Shi,Xiebo Zhou,Shuai Zhang,Yue Hou,Yue Qi,Qiyi Fang,Qingqing Ji,Yu Zhang,Min Hong,Pengfei Yang,Xinfeng Liu,Qing Zhang,Lei Liao,Chuanhong Jin,Zhongfan Liu,Yanfeng Zhang

DOI: https://doi.org/10.1021/acsnano.7b01537

IF: 17.1

2017-01-01

ACS Nano

Abstract:Stacked transition-metal dichalcogenides on hexagonal boron nitride (h-BN) are platforms for high-performance electronic devices. However, such vertical stacks are usually constructed by the layer-by-layer polymer-assisted transfer of mechanically exfoliated layers. This inevitably causes interfacial contamination and device performance degradation. Herein, we develop a two-step, low-pressure chemical vapor deposition synthetic strategy incorporating the direct growth of monolayer h-BN on Au foil with the subsequent growth of MoS2. In such vertical stacks, the interactions between MoS2 and Au are diminished by the intervening h-BN layer, as evidenced by the appearance of photoluminescence in MoS2. The weakened interfacial interactions facilitate the transfer of the MoS2/h-BN stacks from Au to arbitrary substrates by an electrochemical bubbling method. Scanning tunneling microscope/spectroscopy characterization shows that the central h-BN layer partially blocks the metal-induced gap states in MoS2/h-BN/Au ...
Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

Ke Xu,Ting Liang,Zhisen Zhang,Xuezheng Cao,Meng Han,Ning Wei,Jianyang Wu

DOI: https://doi.org/10.1039/d1nr05113j

IF: 6.7

2022-01-01

Nanoscale

Abstract:Grain boundaries (GBs) are inevitable defects in large-area MoS2 samples but they play a key role in their properties, however, the influence of grain misorientation on thermal transport has largely remained unknown. Here, the critical role of misorientation angle in thermal transport characteristics across 5|7 polar dislocation-dominated GBs in monolayer MoS2 is explored using nonequilibrium molecular dynamics simulations. Results show that thermal transport characteristics of defective GBs are greatly dictated by the misorientation angle, with "U"-shaped thermal conductance as misorientation angle varying from around 5.06-52.26°, as well as by GB energy, 5|7 dislocation type and the grain size. Such unique thermal transport across GBs is primarily attributed to rising phonon-boundary softening and scattering with increasing dislocation density at GBs or GB energy, as well as an increase in localized phonon modes. The study establishes the fundamental relationship between GB and the thermal properties of single-layer MoS2 and highlights the vital role of GBs in designing efficient thermoelectric and thermal management transition metal dichalcogenides.
Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2

Xiang Hu,Yong Wang,Jiaren Yuan,Xiaxia Liao,Yangbo Zhou

DOI: https://doi.org/10.3390/ma17163998

2024-08-11

Abstract:Transition metal dichalcogenides (TMDs) are drawing significant attention due to their intriguing photoelectric properties, and these interesting properties are closely related to the number of layers. Obtaining layer-controlled and high-quality TMD is still a challenge. In this context, we use the salt-assisted chemical vapor deposition to grow multilayered MoSe2 flake and characterize it by Raman spectroscopy, second harmonic generation, and photon luminescence. Spectroscopic analysis is an effective way to characterize the stacking order and optoelectronic properties of two-dimensional materials. Notably, the corresponding mapping reflects the film quality and homogeneity. We found that the grown continuous monolayer, bilayer, and trilayer of MoSe2 sheets with different stacking orders exhibit distinctive features. For bilayer MoSe2, the most stable stacking configurations are the AA' and AB order. And the uniformity of the spectroscopy maps demonstrates the high quality of the stacked MoSe2 sheets.
Revealing the Grain Boundary Formation Mechanism and Kinetics During Polycrystalline MoS2 Growth.

Shuai Chen,Junfeng Gao,Bharathi M. Srinivasan,Gang Zhang,Ming Yang,Jianwei Cha,Shijie Wang,Dongzhi Chi,Yong-Wei Zhang

DOI: https://doi.org/10.1021/acsami.9b15654

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Controllable synthesis of MoS2 with desired grain morphology via chemical vapor deposition (CVD) or physical vapor deposition (PVD) remains a challenge. Hence, it is important to understand polycrystalline growth of MoS2 and further provide guidelines for its CVD/PVD growth. Here, we formulate a kinetic Monte Carlo (kMC) model aiming at predicting the grain boundary (GB) formation in the CVD/PVD growth of polycrystalline MoS2. In the kMC model, the grain growth is via kink nucleation and propagation, whose energetic parameters and initial nucleus details are either from first-principles calculations or from experiments. Using the kMC model, we perform extensive simulations to predict the GB formation by using two, three, four, and five initial nuclei and compare the simulation results with previous experimental results. The obtained GB morphologies are in an excellent agreement with those experimental results. These agreements suggest that the proposed kMC model can correctly capture the mechanism and kinetics of GB formation. In particular, we reveal that the formation of smooth/rough GB is dictated by the two growth vectors for the kink propagation at the two associated grain edges, which is validated by our high-resolution scanning transmission electron microscopy images for PVD growth of MoS2 grains. Besides, we have made predictions beyond reproducing experimental observations, including the growth with artificially designed nuclei, the morphology transformation by tuning the Mo and S sources, and the formation of high-quality single-crystalline monolayer MoS2 by using single-crystalline substrates with vicinal steps. Our kMC model may serve as a powerful predictive tool for the CVD/PVD growth of monolayer MoS2 with desired GB configurations.
Visualizing grain boundaries in monolayer MoSe 2 using mild H 2 O vapor etching

Jinhuan Wang,Xiaozhi Xu,Ruixi Qiao,Jing Liang,Can Liu,Bohao Zheng,Lei Liu,Peng Gao,Qingze Jiao,Dapeng Yu,Yun Zhao,Kaihui Liu

DOI: https://doi.org/10.1007/s12274-018-1991-2

IF: 9.9

2018-01-01

Nano Research

Abstract:Beyond graphene, two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted significant attention owing to their potential in next-generation nanoelectronics and optoelectronics. Nevertheless, grain boundaries are ubiquitous in large-area as-grown TMD materials and would significantly affect their band structure, electrical transport, and optical properties. Therefore, the characterization of grain boundaries is essential for engineering the properties and optimizing the growth in TMD materials. Although the existence of boundaries can be measured using scanning tunneling microscopy, transmission electron microscopy, or nonlinear optical microscopy, a universal, convenient, and accurate method to detect boundaries with a twist angle over a large scale is still lacking. Herein, we report a high-throughput method using mild hot H 2 O etching to visualize grain boundaries of TMDs under an optical microscope, while ensuring that the method is nearly noninvasive to grain domains. This technique utilizes the reactivity difference between stable grain domains and defective grain boundaries and the mild etching capacity of hot water vapor. As grain boundaries of two domains with twist angles have defective lines, this method enables to visualize all types of grain boundaries unambiguously. Moreover, the characterization is based on an optical microscope and therefore naturally of a large scale. We further demonstrate the successful application of this method to other TMD materials such as MoS 2 and WSe 2 . Our technique facilitates the large-area characterization of grain boundaries and will accelerate the controllable growth of large single-crystal TMDs.
Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Arend M. van der Zande,Pinshane Y. Huang,Daniel A. Chenet,Timothy C. Berkelbach,Youmeng You,Gwan-Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James C. Hone

DOI: https://doi.org/10.1038/nmat3633

2013-01-10

Abstract:Recent progress in large-area synthesis of monolayer molybdenum disulfide, a new two-dimensional direct-bandgap semiconductor, is paving the way for applications in atomically thin electronics. Little is known, however, about the microstructure of this material. Here we have refined chemical vapor deposition synthesis to grow highly crystalline islands of monolayer molybdenum disulfide up to 120 um in size with optical and electrical properties comparable or superior to exfoliated samples. Using transmission electron microscopy, we correlate lattice orientation, edge morphology, and crystallinity with island shape to demonstrate that triangular islands are single crystals. The crystals merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings. Density functional theory reveals localized mid-gap states arising from these 8-4 defects. We find that mirror boundaries cause strong photoluminescence quenching while tilt boundaries cause strong enhancement. In contrast, the boundaries only slightly increase the measured in-plane electrical conductivity.

Materials Science,Mesoscale and Nanoscale Physics
Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Sina Najmaei,Zheng Liu,Wu Zhou,Xiaolong Zou,Gang Shi,Sidong Lei,Boris I. Yakobson,Juan-Carlos Idrobo,Pulickel M. Ajayan,Jun Lou

DOI: https://doi.org/10.1038/nmat3673

2013-01-14

Abstract:Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

Materials Science
Well-Hidden Grain Boundary in the Monolayer MoS2 Formed by a Two-Dimensional Core-Shell Growth Mode

Wenting Zhang,Yue Lin,Qi Wang,Weijie Li,Zhifeng Wang,Jiangluqi Song,Xiaodong Li,Lijie Zhang,Lixin Zhu,Xiaoliang Xu

DOI: https://doi.org/10.1021/acsnano.7b06232

IF: 17.1

2017-01-01

ACS Nano

Abstract:Guided by the hexagonal lattice symmetry, triangles and hexagons are the most basic morphological units for two-dimensional (2D) transition metal dichalcogenides (TMDs) synthesized by chemical vapor deposition (CVD). Also, it is widely acknowledged that these units start from the single nucleation site and then grow epitaxially. Accordingly, the triangular monolayer (ML) samples are generally considered as single crystals. Here, we report a 2D core-shell growth mode in the CVD process for ML-MoS2, which leads to one kind of "pseudo" single-crystal triangles containing triangular outline grain boundaries (TO-GBs). It is difficult to be optically distinguished from the "true" single-crystal triangles. The weakening of Raman peaks and the remarkable enhancement of photoluminescence (PL) are found at the built-in TO-GBs, which could be useful for high-performance optoelectronics. In addition, the electrical measurements indicate that the TO-GBs are conductive. Furthermore, TO-GBs and the common grain boundaries (CO-GBs) can coexist in a single flake, whereas their optical visibility and optical modifications (Raman and PL) are quite different. This work is helpful in further understanding the growth mechanism of 2D TMD materials and may also play a significant role in related nanodevices.
Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Xiaolong Liu,Itamar Balla,Hadallia Bergeron,Mark C. Hersam

DOI: https://doi.org/10.48550/arXiv.1604.00682

2016-04-03

Materials Science

Abstract:With reduced degrees of freedom, structural defects are expected to play a greater role in two-dimensional materials in comparison to their bulk counterparts. In particular, mechanical strength, electronic properties, and chemical reactivity are strongly affected by crystal imperfections in the atomically thin limit. Here, ultra-high vacuum (UHV) scanning tunneling microscopy (STM) and spectroscopy (STS) are employed to interrogate point and line defects in monolayer MoS2 grown on epitaxial graphene (EG) at the atomic scale. Five types of point defects are observed with the majority species showing apparent structures that are consistent with vacancy and interstitial models. The total defect density is observed to be lower than MoS2 grown on other substrates, and is likely attributed to the van der Waals epitaxy of MoS2 on EG. Grain boundaries (GBs) with 30{\deg} and 60{\deg} tilt angles resulting from the rotational commensurability of MoS2 on EG are more easily resolved by STM than atomic force microscopy at similar scales due to the enhanced contrast from their distinct electronic states. For example, band gap reduction to ~0.8 eV and ~0.5 eV is observed with STS for 30{\deg} and 60{\deg} GBs, respectively. In addition, atomic resolution STM images of these GBs are found to agree well with proposed structure models. This work offers quantitative insight into the structure and properties of common defects in MoS2, and suggests pathways for tailoring the performance of MoS2/graphene heterostructures via defect engineering.
Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Ankit Nalin Mehta,Jiongjiong Mo,Geoffrey Pourtois,Ashish Dabral,Benjamin Groven,Hugo Bender,Paola Favia,Matty Caymax,Wilfried Vandervorst

DOI: https://doi.org/10.1021/acs.jpcc.0c01468

2020-01-01

The Journal of Physical Chemistry C

Abstract:Grain boundaries between 60 degrees rotated and twinned crystals constitute the dominant type of extended line defects in two-dimensional transition metal dichalcogenides (2D MX2) when grown on a single crystalline template through van der Waals epitaxy. The two most common 60 degrees grain boundaries in MX2 layers, i.e., beta- and gamma-boundaries, introduce distinct distortion and strain into the 2D lattice. They impart a localized tensile or compressive strain on the subsequent layer, respectively, due to van der Waals coupling in bilayer MX2 as determined by combining atomic resolution electron microscopy, geometric phase analysis, and density functional theory. Based on these observations, an alternate route to strain engineering through controlling intrinsic van der Waals forces in homobilayer MX2 is proposed. In contrast to the commonly used external means, this approach enables the localized application of strain to tune the electronic properties of the 2D semiconducting channel in ultra-scaled nanoelectronic applications.
Polymorphism of Segmented Grain Boundaries in Two-Dimensional Transition Metal Dichalcogenides

Maolin Yu,Chao Zhu,Yongmin He,Jiadong Zhou,Ying Xu,Zheng Liu,Wanlin Guo,Zhuhua Zhang

DOI: https://doi.org/10.1021/acs.nanolett.1c01156

IF: 10.8

2021-07-08

Nano Letters

Abstract:Grain boundaries (GBs) are vital to crystal materials and their applications. Although GBs in bulk and two-dimensional materials have been extensively studied, the segmented GBs observed in transition metal dichalcogenide monolayers by a sequence of folded segments remain a mystery. We visualize the large-area distribution of the segmented GBs in MoSe2 monolayers and unravel their structural origin using ab initio calculations combined with high-resolution atomic characterizations. Unlike normal GBs in two-dimensional materials with commonly one type of dislocation cores, the segmented GBs consist of two basic elements—4|8 and 4|4|8 cores, whose alloying results in structural diversity and distinctly high stability due to relieved stress fields nearby. The defective polygons can uniquely migrate along the segmented GBs via the movement of single molybdenum atoms, unobtrusively endowing a given GB with variable appearances. Furthermore, the segmented GBs can achieve useful functionalities such as intrinsic magnetism and highly active electrocatalysis.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c01156?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01156</a>.Computational and experimental methods, SEM image of a six-point-star-shaped MoSe2 matrix, original STEM-ADF images, a STEM image of intermediate state, geometry phase analysis, adjunctive rotation maps of crystal lattice along GBs in different samples, calculated strain maps around segmented and straight GBs, the s-GBs with two segments misoriented by 120°, atomic-resolution ADF-STEM images of selected GBs with θf = 141.4 and 149.1°, the evolution of a s-GB with x = 0.29 and an initial θf of 139° composed of misoriented octagons in its two neighboring segments, the effect of polygon migrations on electronic properties of the s-GB, the HER activity of s-GBs, and energetics of s-GBs in other 2D MX2 (M = Mo, W; X = S, Se) are collected (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c01156/suppl_file/nl1c01156_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Investigation of CVD growth of 2D MoS2 on MXene Structures with Photoluminescence Mapping and Fluorescence Lifetime Imaging Microscopy

Elif Sevgi Sicim,Ozan Aydin,Feridun Ay,Nihan Kosku Perkgöz

DOI: https://doi.org/10.1002/pssb.202300242

2023-06-14

physica status solidi (b) - basic solid state physics

Abstract:Molybdenum disulfide (MoS2) and molybdenum carbide (Mo2C) are two‐dimensional materials with unique properties that make them suitable for electronic and optoelectronic applications. MoS2 is known for its high optical quantum yield and strong light‐matter interaction, while Mo2C has metallic properties and is a member of the relatively new class of two‐dimensional materials called MXenes. In this research, a new heterostructure is obtained by growing MoS2 directly on Mo2C for the first time using chemical vapor deposition (CVD) method. This novel hybrid structure changes the interlayer interaction and excited state dynamics, thereby increasing material diversity. The structure is characterized using Raman spectroscopy and atomic force microscopy (AFM), while photoluminescence (PL) and fluorescence lifetime imaging microscopy (FLIM) measurements are used to examine exciton motions. The study shows that the thickness of the hybrid structure is directly proportional to the frequency difference between the E2g and A1g modes, and inversely proportional to the PL intensities. The hybrid structure displays distinct exciton transitions due to the metallic effect and a longer fluorescence lifetime when compared to the bare monolayer of MoS2. The introduction of this novel hybrid structure with its optical properties holds great potential in opening up new avenues for optoelectronic device applications. This article is protected by copyright. All rights reserved.
Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Satender Kataria,Stefan Wagner,Teresa Cusati,Alessandro Fortunelli,Giuseppe Iannaccone,Himadri Pandey,Gianluca Fiori,Max C. Lemme

DOI: https://doi.org/10.1002/admi.201700031

2017-03-02

Abstract:Monolayer molybdenum disulphide (MoS$_2$) is a promising two-dimensional (2D) material for nanoelectronic and optoelectronic applications. The large-area growth of MoS$_2$ has been demonstrated using chemical vapor deposition (CVD) in a wide range of deposition temperatures from 600 °C to 1000 °C. However, a direct comparison of growth parameters and resulting material properties has not been made so far. Here, we present a systematic experimental and theoretical investigation of optical properties of monolayer MoS$_2$ grown at different temperatures. Micro-Raman and photoluminescence (PL) studies reveal observable inhomogeneities in optical properties of the as-grown single crystalline grains of MoS$_2$. Close examination of the Raman and PL features clearly indicate that growth-induced strain is the main source of distinct optical properties. We carry out density functional theory calculations to describe the interaction of growing MoS$_2$ layers with the growth substrate as the origin of strain. Our work explains the variation of band gap energies of CVD-grown monolayer MoS$_2$, extracted using PL spectroscopy, as a function of deposition temperature. The methodology has general applicability to model and predict the influence of growth conditions on strain in 2D materials.

Materials Science
Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

Wei Li,A. Glen Birdwell,Matin Amani,Robert A. Burke,Xi Ling,Yi-Hsien Lee,Xuelei Liang,Lian‐Mao Peng,Curt A. Richter,Jing Kong,David J. Gundlach,Nhan V. Nguyen

DOI: https://doi.org/10.1103/physrevb.90.195434

IF: 8.6

2014-01-01

Physical Review Letters

Abstract:Recently emerging large-area single-layer MoS2 grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS2 has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS2 revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS2 that shifts to 1.83 eV in monolayer MoS2. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS2 momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at
Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2

Fan Zhang,Zhixing Lu,Yichul Choi,Haining Liu,Husong Zheng,Liming Xie,Kyungwha Park,Liying Jiao,Chenggang Tao

DOI: https://doi.org/10.48550/arXiv.1801.00811

2018-01-02

Mesoscale and Nanoscale Physics

Abstract:Van der Waals (vdW) heterostructures synthesized through the chemical vapor deposition (CVD) method allow creation and tuning of intriguing electronic and optical properties of two- dimensional (2D) materials, the knowledge of which is critical for a wide range of potential applications. Here we report our scanning tunneling microscopy/spectroscopy (STM/STS) study of as-grown MoS2 monolayer and WS2/MoS2 heterobilayer on SiO2. The heterobilayer appears smoother than the MoS2 monolayer, with root mean square (RMS) roughness of 0.230 +- 0.021 nm in the former and 0.329 +- 0.033 nm in the latter. For the first time, to our knowledge, we directly observed a continuous interface between the MoS2 monolayer and the top layer of the heterobilayer with atomic resolution. This finding contrasts to the previously reported open edges in the top layer of the heterobilayer. Our STS results and density functional theory (DFT) calculations revealed the band gaps of the heterobilayer and the MoS2 monolayer.
Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS$_{2}$ monolayers

Frederico B. Sousa,Rafael Battistella Nadas,Rafael Martins,Ana P. M. Barboza,Jaqueline S. Soares,Bernardo R. A. Neves,Ive Silvestre,Ado Jorio,Leandro M. Malard

2024-01-22

Abstract:The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resolution limitation lying in a $\mu$m-scale, which can be overcomed by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil nanoscale optical heterogeneities at grain boundaries, local strain fields and edges in grown MoS$_{2}$ monolayers. A noticeable enhancement of the exciton peak intensity corresponding to a trion emission quenching is observed at narrow regions down to 47 nm of width at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, distinct samples present different nano-optical responses at their edges due to strain and passivation defects. The passivated defective edges show a photoluminescence intensity enhancement and energy blueshift as well as a frequency blueshift of the 2LA Raman mode. On the other hand, the strained edges display a photoluminescence energy redshift and frequency redshifts for E$_{2g}$ and 2LA Raman modes. Our work shows that different defect features can be only probed by using optical spectroscopies with a nanometric resolution, thus revealing hindered local impact of different nanoscale defects in two-dimensional materials.

Materials Science
Folded MoS2 bilayers with variable interfacial coupling revealed by Raman and Photoluminescence spectroscopy

Yi Liu,Shaozhi Wang,Xue Chen,Mingming Yang,Xiaoli Li,Baolai Liang

DOI: https://doi.org/10.1016/j.optmat.2020.110641

IF: 3.754

2021-01-01

Optical Materials

Abstract:The twisted bilayers of MoS2 with van der Waals coupling have attracted much attention of researchers for providing multiple degrees of freedom to engineer optical and electronic properties. In this work, partial monolayer MoS2 flakes are folded onto the monolayer MoS2 flake itself to form folded MoS2 bilayers during the chemical vapor deposition (CVD) growth process. Lattice vibrations and photon transitions of folded MoS2 bilayers with variable interfacial coupling are revealed by Raman and Photoluminescence (PL) spectroscopy. It is found that interlayer twist angle provides novel physical properties, e.g., the occurring of folded phonons and the evolution of exciton transitions, for promising application of optoelectronic devices.

materials science, multidisciplinary,optics
Kinetic Nature of Grain Boundary Formation in As-Grown Mos2 Monolayers

Jingxin Cheng,Tao Jiang,Qingqing Ji,Yu Zhang,Zhiming Li,Yuwei Shan,Yanfeng Zhang,Xingao Gong,Weitao Liu,Shiwei Wu

DOI: https://doi.org/10.1002/adma.201501354

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Grain boundaries in as-grown polycrystalline MoS2 monolayers are revealed by second-harmonic-generation microscopy. Through the anisotropic polarization pattern and phase interference at the grain boundary, grain edge termination and boundary types are identified. Statistical analysis on hundreds of grains shows that grain-boundary formation is driven by kinetics and can be nicely described by the edge attachment growth model.
Observing Grain Boundaries in CVD-grown Monolayer Transition Metal Dichalcogenides.

Thuc Hue Ly,Ming-Hui Chiu,Ming-Yang Li,Jiong Zhao,David J. Perello,Magdalena Ola Cichocka,Hye Min Oh,Sang Hoon Chae,Hye Yun Jeong,Fei Yao,Lain-Jong Li,Young Hee Lee

DOI: https://doi.org/10.1021/nn504470q

IF: 17.1

2014-01-01

ACS Nano

Abstract:Two-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries.
Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer

Jing Liang,Dongyang Yang,Jingda Wu,Jerry I. Dadap,Kenji Watanabe,Takashi Taniguchi,Ziliang Ye

DOI: https://doi.org/10.1103/physrevx.12.041005

2022-01-01

Physical Review X

Abstract:The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moire ' superlattice may endow exotic physical phenomena, such as moire ' excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significant interest because of the emergence of an out-of-plane polarization from nonferroelectric monolayer constituents. However, as a key parameter responsible for the physical properties, the interlayer coupling and its relationship with ferroelectricity remain elusive. Here, we probe the asymmetric interlayer coupling between the conduction band of one layer and the valence band from the other layer in a 3R-MoS2 bilayer, which can be understood as a result of a layer-dependent Berry phase winding. By performing optical spectroscopy in a dual-gated device, we show an effective type-II band alignment exists at K points in the 3R-MoS2 bilayer. Furthermore, by unraveling various contributions to the band offset, we quantitatively determine the asymmetric interlayer coupling and spontaneous polarization in 3R-MoS2. Our results unveil the physical nature of stacking-induced ferroelectricity in TMD homostructures and have important implications for moire ' physics in 2D semiconductors.

The Mirizzi syndrome: a cause of common bile duct obstruction.

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Grain Boundary and Misorientation Angle-Dependent Thermal Transport in Single-Layer MoS2.

Spectroscopic Analysis on Different Stacking Configurations of Multilayered MoSe2

Revealing the Grain Boundary Formation Mechanism and Kinetics During Polycrystalline MoS2 Growth.

Visualizing grain boundaries in monolayer MoSe 2 using mild H 2 O vapor etching

Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Well-Hidden Grain Boundary in the Monolayer MoS2 Formed by a Two-Dimensional Core-Shell Growth Mode

Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Polymorphism of Segmented Grain Boundaries in Two-Dimensional Transition Metal Dichalcogenides

Investigation of CVD growth of 2D MoS2 on MXene Structures with Photoluminescence Mapping and Fluorescence Lifetime Imaging Microscopy

Growth-Induced Strain in Chemical Vapor Deposited Monolayer MoS2: Experimental and Theoretical Investigation

Broadband Optical Properties of Large-Area Monolayer CVD Molybdenum Disulfide

Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2

Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS$_{2}$ monolayers

Folded MoS2 bilayers with variable interfacial coupling revealed by Raman and Photoluminescence spectroscopy

Kinetic Nature of Grain Boundary Formation in As-Grown Mos2 Monolayers

Observing Grain Boundaries in CVD-grown Monolayer Transition Metal Dichalcogenides.

Optically Probing the Asymmetric Interlayer Coupling in Rhombohedral-Stacked MoS2 Bilayer