Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Sina Najmaei,Zheng Liu,Wu Zhou,Xiaolong Zou,Gang Shi,Sidong Lei,Boris I. Yakobson,Juan-Carlos Idrobo,Pulickel M. Ajayan,Jun Lou

DOI: https://doi.org/10.1038/nmat3673

2013-01-14

Abstract:Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

Materials Science

What problem does this paper attempt to address?

The paper mainly aims to address the following issues:

1. **Synthesis of large-scale high-quality MoS₂ monolayer films**: The study investigates the synthesis of large-scale, high-quality MoS₂ atomic layers through chemical vapor deposition (CVD) technology. MoS₂, as a two-dimensional material with a direct bandgap, holds great potential in next-generation nanoelectronics.

2. **Controlling the nucleation mechanism during the growth of MoS₂ films**: The paper discusses in detail the nucleation, growth, and grain boundary formation mechanisms of MoS₂ films during the growth process and proposes a controllable nucleation strategy to promote the formation of large-area monolayer or multilayer films.

3. **Investigating the electrical properties of MoS₂ films**: By conducting an in-depth analysis of the crystal structure, grain morphology, and grain boundaries of MoS₂ films, the study evaluates their electrical properties and explores the impact of grain boundaries on material performance.

4. **Understanding the grain boundary structure and its impact on electrical properties**: Combining experimental methods with first-principles calculations, the research examines the atomic structure and energy landscape of grain boundaries in MoS₂ films and assesses how these grain boundaries affect the material's electrical properties.

In summary, this paper aims to improve the synthesis methods of MoS₂ films to enhance their quality, gain a deeper understanding of their growth mechanisms, and investigate the impact of grain boundaries on performance, thereby promoting the application of MoS₂ in electronic devices.