Abstract:Epitaxial films of $\mathrm{C}{\mathrm{o}}_{x}\mathrm{M}{\mathrm{n}}_{y}\mathrm{G}{\mathrm{e}}_{z}$ grown on Ge (111) substrates by molecular-beam-epitaxy techniques have been investigated as a continuous function of composition using combinatorial synchrotron x-ray diffraction (XRD) and x-ray fluorescence (XRF) spectroscopy techniques. A high-resolution ternary epitaxial phase diagram is obtained, revealing a small number of structural phases stabilized over large compositional regions. Ordering of the constituent elements in the compositional region near the full Heusler alloy $\mathrm{C}{\mathrm{o}}_{2}\mathrm{MnGe}$ has been examined in detail using both traditional XRD and a new multiple-edge anomalous diffraction (MEAD) technique. Multiple-edge anomalous diffraction involves analyzing the energy dependence of multiple reflections across each constituent absorption edge in order to detect and quantify the elemental distribution of occupation in specific lattice sites. Results of this paper show that structural and chemical ordering are very sensitive to the Co : Mn atomic ratio, such that the ordering is the highest at an atomic ratio of 2 but significantly reduced even a few percent off this ratio. The in-plane lattice is nearly coherent with that of the Ge substrate, while the approximately 2% lattice mismatch is accommodated by the out-of-plane tetragonal strain. The quantitative MEAD analysis further reveals no detectable amount (0.5%) of Co-Mn site swapping, but instead high levels (26%) of Mn-Ge site swapping. Increasing Ge concentration above the Heusler stoichiometry $(\mathrm{C}{\mathrm{o}}_{0.5}\mathrm{M}{\mathrm{n}}_{0.25}\mathrm{G}{\mathrm{e}}_{0.25})$ is shown to correlate with increased lattice vacancies, antisites, and stacking faults, but reduced lattice relaxation. The highest degree of chemical ordering is observed off the Heusler stoichiometry with a Ge enrichment of 5 at.%.

Combinatorial Synthesis and Characterization of a Ternary Epitaxial Film of Co and Mn Doped Ge (001)

Dopant Stability and Strain States in Co and Mn-Doped Ge (001) Epitaxial Films

Combinatorial Synthesis and Characterization of Comnge Alloys

Structure and magnetism of Coa(1−x)MnaxGeb epitaxial films

Structural and Chemical Ordering of Heusler CoxMnyGez Epitaxial …

Homoepitaxial Mn3Ge films on ultra-thin Fe seed layer with high perpendicular magnetic anisotropy

Novel Germanium-Based Magnetic Semiconductors

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Evidence for Strain Compensation in Stabilizing Epitaxial Growth of Highly Doped Germanium

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Effect of Mn Concentration and Growth Temperature on Nanostructures and Magnetic Properties of Ge1−xMnx Grown on Si

Epitaxial Ferromagnetic Mn5Ge3 on Ge(111)

Anomalous X-Ray Diffraction Study of Disorders in Epitaxial Films of the Heusler Alloy, Co2mnge

Epitaxial Structure and Magnetic Anisotropies of Metastable Single Crystal Co0.70Mn0.30 Film

Composition Dependence of Magnetic Anisotropy and Quadratic Magnetooptical Effect in Epitaxial Films of the Heusler Alloy Co2MnGe

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Strain-induced Switching Between Noncollinear and Collinear Spin Configuration in Magnetic Mn5Ge3 Films

Structural and Magnetic Properties of MBE-grown GeMnN_{2} Thin Films

Study of Magnetic Anisotropy and Magnetization Reversal Using the Quadratic Magnetooptical Effect in Epitaxial Co(x)Mn(y)Ge(z)(111) Films.