Abstract:Dilute magnetic MnGe quantum dots (QDs) have been a popular research topic due to their great potential application on spintronics and their natural compatibility with today's highly developed silicon-based complementary metal oxide semiconductor (CMOS) technology. However, the relatively low Curie temperature impedes their ability to maintain the ferromagnetic phase and creates difficulty for their practical application in spintronics at room temperature. Here, we report the first preparation of the Te-doped dilute-magnetic Mn 0.064 Ge 0.895 Te 0.041 /Si QDs by using the ion beam composite target sputtering technique. Growth temperature and deposition thickness dependent QDs density and magnetic properties were investigated systematically. The experimental results indicate that the QD density of Mn 0.064 Ge 0.895 Te 0.041 /Si sample increases first and then reduces with the deposited thickness, while the QDs' diameters increase monotonously from 10.18±0.21 to 33.6±0.34 nm. Curie temperature of 369 K observed in Mn 0.064 Ge 0.895 Te 0.041 QDs is higher than that of 295 K observed in Mn 0.061 Ge 0.939 counterparts grown at the same conditions. Correspondingly, the saturation and residual magnetization in the former are much higher than in the latter. The ferromagnetic enhancement can be attributed to that the nonpolar Mn 0.064 Ge 0.936 QDs transform into Rashba polar Mn 0.064 Ge 0.895 Te 0.041 QDs with the doping of Te ions, which obviously promotes the exchange coupling between holes and Mn atoms. Our work provides a practical approach for improving the ferromagnetism and Curie temperature of silicon-based diluted magnetic semiconductor QDs.

Research Update: Strain and Composition Effects on Ferromagnetism of Mn0.05Ge0.95 Quantum Dots

Ge<sub><i>x</i></sub>Si<sub>1-<i>x</i></sub> virtual-layer enhanced ferromagnetism in self-assembled Mn<sub>0.06</sub>Ge<sub>0.94</sub> quantum dots grown on Si wafers by molecular beam epitaxy

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Magnetic and Transport Properties of Mn-implanted Ge/Si Quantum Dots

Growth and Magnetism of MnxGe1−x Heteroepitaxial Quantum Dots Grown on Si Wafer by Molecular Beam Epitaxy

Ferromagnetism in self-assembled Ge quantum dots material followed by Mn-implantation and annealing

Carrier Effects on Ferromagnetism of Mnxge1-X Quantum Dots

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots

Te doping effects on the ferromagnetic performance of the MnGe/Si quantum dots grown by ion beam sputtering deposition

Electric-field-controlled ferromagnetism in high-Curie-temperature Mn 0.05 Ge 0.95 quantum dots

Dopant Stability and Strain States in Co and Mn-Doped Ge (001) Epitaxial Films

High Curie Temperature Achieved in the Ferromagnetic Mn<sub>x</sub>Ge<sub>1−x</sub>/Si Quantum Dots Grown by Ion Beam Co-Sputtering

Magnetic Mn-Doped Ge Nanostructures

Electric-field Controlled Ferromagnetism in MnGe Magnetic Quantum Dots.

Deposition Amount Effects on the Microstructure of Ion-Beam-sputtering Grown Mn0.03Ge0.97 Quantum Dots for Spintronic Applications

High Curie Temperature Achieved in the Ferromagnetic MnxGe<sub>1-x</sub>/Si Quantum Dots Grown by Ion Beam Co-Sputtering

Nanoengineering of an Si/MnGe Quantum Dot Superlattice for High Curie-temperature Ferromagnetism.

Room-temperature Electric-Field Controlled Ferromagnetism in Mn0.05Ge0.95 Quantum Dots.

Strain-induced Switching Between Noncollinear and Collinear Spin Configuration in Magnetic Mn5Ge3 Films

Influence of Ge-doping on the collinear and non-collinear antiferromagnetic phases of Mn 5 Si 3 alloy

Experimental And Theoretical Investigations On Ferromagnetic Nature Of Mn-Doped Dilute Magnetic Semiconductors