Abstract:Effect of Ge-doping at the non-magnetic site (Si-site) of the Mn-based binary alloy Mn 5 Si 3 has been explored through temperature-dependent x-ray diffraction, dc-magnetic, and electrical transport measurements. All the doped alloys show D 8 8 type hexagonal structure with space group P 6 3 / m c m at room temperature and undergoes two structural distortions, hexagonal ( P 6 3 / m c m ) → orthorhombic ( C c m m ) → orthorhombic ( C c 2 m ), on cooling. The magnetic characters of these orthorhombic ( C c 2 m ), orthorhombic ( C c m m ), and hexagonal ( P 6 3 / m c m ) phases are non-collinear antiferromagnetic (AFM1), collinear antiferromagnetic (AFM2), and paramagnetic (PM), respectively. Doping of Ge results in a significant increase in the AFM1 to AFM2 transition temperature ( T N 1 ). However, the AFM2 to PM transition point remains unchanged. In addition, a reasonable increase in the critical field values of the AFM1 to AFM2 transition via another non-collinear antiferromagnetic phase (AFM1 ′ ) with increasing Ge concentration has been observed, indicating the strengthening of AFM1 and AFM1 ′ phases over the AFM2 phase. Such behaviors make the observation of unusual magnetic properties of undoped Mn 5 Si 3 alloys, like inverted hysteresis loop (IHL) and thermomagnetic irreversibility (TI), more evident for these Ge-doped alloys. Further, this study unfolds the presence of conventional and inverse magnetocaloric effect and they found to decrease with Ge doping. An interesting interplay for positive and negative magnetoresistance has also been observed in all the studied alloys.

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