Abstract:Currently, magnetic storage devices are encountering the problem of achieving lightweight and high integration in mobile computing devices during the information age. As a result, there is a growing urgency for two-dimensional half-metallic materials with a high Curie temperature ( T C ). This study presents a theoretical investigation of the fundamental electromagnetic properties of the monolayer hexagonal lattice of Mn 2 X 3 (X = S, Se, Te). Additionally, the potential application of Mn 2 X 3 as magneto-resistive components is explored. All three of them fall into the category of ferromagnetic half-metals. In particular, the Monte Carlo simulations indicate that the T C of Mn 2 S 3 reachs 381 K, noticeably greater than room temperature. These findings present notable advantages for the application of Mn 2 S 3 in spintronic devices. Hence, a prominent spin filtering effect is apparent when employing non-equilibrium Green's function simulations to examine the transport parameters. The resulting current magnitude is approximately 2 × 10 4 nA, while the peak gigantic magnetoresistance exhibits a substantial value of 8.36 × 10 16 %. It is noteworthy that the device demonstrates a substantial spin Seebeck effect when the temperature differential between the electrodes is modified. In brief, Mn 2 X 3 exhibits outstanding features as a high T C half-metal, exhibiting exceptional capabilities in electrical and thermal drives spin transport. Therefore, it holds great potential for usage in spintronics applications.

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