Abstract:Two-dimensional (2D) multiferroic materials are recognized as promising candidates for next-generation nanodevices due to their tunable magnetoelectric coupling and distinctive physical phenomena. In this study, we proposed a novel 2D multiferroic van der Waals heterostructure (vdWH) by stacking atomic layers of ferroelectric In 2 Se 3 and ferromagnetic MnI 3 . Using first-principles calculations, we found that the MnI 3 /In 2 Se 3 vdWH exhibit robust metallic conductivity across various spin and polarization states, preserving the distinctive band characteristics of isolated In 2 Se 3 and MnI 3 . However, the alignment of Fermi levels causes the conduction band minimum (CBM) and valence band maximum (VBM) of In 2 Se 3 and MnI 3 to shift relative to their original band structures. Remarkably, the MnI 3 /In 2 Se 3 with the upward polarization state of In 2 Se 3 exhibits an Ohmic contact. Switching the polarization direction of In 2 Se 3 from upward to downward can transform the MnI 3 /In 2 Se 3 vdWH from an Ohmic contact to a p-type Schottky contact, while also modifying its dipole moment, magnetic strength and direction. Based on these properties of MnI 3 /In 2 Se 3 vdWH, we designed the field-effect transistors (FETs) with high on/off rates and nonvolatile data storage device. Furthermore, the Schottky barrier heights (SBHs), magnetic moment, and dipole moment of MnI 3 /In 2 Se 3 vdWH can also be effectively regulated by reducing the interlayer distance. With the continuous reduction of the interlayer distance of MnI 3 /In 2 Se 3 vdWH, its easy magnetization axis is expected to shift from in-plane to out-of-plane. These findings offer new insights for the design and development of the next-generation spintronic and nonvolatile memory nanodevices.

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

Tunable sliding ferroelectricity and magnetoelectric coupling in two-dimensional multiferroic MnSe materials

Tunable Schottky barriers and magnetoelectric coupling driven by ferroelectric polarization reversal of MnI 3 /In 2 Se 3 multiferroic heterostructures

Iron-doping induced multiferroic in two-dimensional In2Se3

Half-metallic Ferromagnetic Properties of Mn-doped MoSe2 and Its Heterostructure

Tunable Electronic Structures and Half-Metallicity in Two-Dimensional InSe Functionalized with Magnetic Superatom.

Magnetism in Monolayer InSe by Nonmetal Doping: First-principles Study

Doping induced multiferroicity and quantum anomalous Hall effect in $α$-In$_2$Se$_3$ thin films

Tunable magnetism in ferroelectric α -In 2 Se 3 by hole-doping

Tuning the magnetic and electronic properties of monolayer VI3 by 3d transition metal doping: A first-principles study

The coexistence of magnetism and ferroelectricity in 3d transition metal doped SnTe monolayer

Electrically tunable magnetism and unique intralayer charge transfer in Janus monolayer MnSSe for spintronics applications

Electronic structure, Curie temperature, and magnetic transport of a two-dimensional multiferroic heterostructure

Tuning the Magnetic Properties of the Monolayer MoSe2 by Nonmetal Doping: First-principles Study

Half-metal Mn2GeI2 monolayer with high Curie temperature and large perpendicular magnetic anisotropy

Charge doping and electric field tunable ferromagnetism and Curie temperature in MnS2 monolayer

Predicting Intrinsic Antiferromagnetic and Ferroelastic MnF4 monolayer with Controllable Magnetization

Room-temperature Half-Metals Induced Via Chemical Surface Modification: 2D Mn2Se2 Monolayer

Weak ferromagnetism and magnetoelectric coupling in van der Waals antiferromagnet MnPSe3

Half-Metallicity In Mnpse3 Exfoliated Nanosheet With Carrier Doping