Abstract:Two-dimensional intrinsic ferromagnets with high Curie temperature and large perpendicular magnetic anisotropy (PMA) are promising candidates for data storage and spintronics applications. In this work, first-principle calculations and Monte Carlo simulation are used to investigate the stability, electronic structure, and magnetic anisotropy of monolayers of CrSeX (X = Cl, Br, I). It is found that monolayer CrSeX (X = Cl, Br, I) species are two-dimensional intrinsic ferromagnets and are thermally stable at room temperature. It is worth noting that the Curie temperatures of monolayer CrSeX (X = Cl, Br, I) can reach or even exceed room temperature, and a strong PMA can be obtained in monolayer CrSeI. Interestingly, the PMA of monolayer CrSeI is mainly provided by the nonmetallic I atom with large spin–orbit coupling and magnetic anisotropy of the nonmetallic I atom reaching up to 0.572 meV/I atom, which is comparable to that of metallic Fe atoms at Fe/MgO interfaces. In contrast to monolayer CrSeI, monolayer CrSeCl and CrSeBr possess weak in-plane magnetic anisotropy, and their easily magnetized direction is the [100] axis. By analyzing the projected density of states and the p-orbital-resolved magnetic anisotropy energy of the nonmetallic I atom based on second-order perturbation theory, we find that the large PMA of monolayer CrSeI is mainly provided by the matrix element difference between the spin-up px and py states of the nonmetallic I atoms, and the difference between it and the matrix element difference between the spin-up py and pz states of the nonmetallic I atoms in the case of the magnetic moment aligning [100] and [010] axes is the reason why the energy of monolayer CrSeI for the magnetic moment aligning [100] axis is smaller than the energy for the magnetic moment aligning [010] axis. This study suggests that monolayer CrSeI is a promising candidate for future applications in spintronic devices.

Cr2XTe4 (X = Si, Ge) Monolayers: a New Type of Two-Dimensional High-T C Ising Ferromagnetic Semiconductors with a Large Magnetic Anisotropy

Two-Dimensional Intrinsic Ferromagnetic Materials of Janus 2H-NbXY (X, Y = S, Se and Te, X ≠ Y) Monolayers with High Curie Temperature and Large Magnetic Anisotropy

Two-dimensional monolayer CrGaS3: A ferromagnetic semiconductor with high Curie temperature and tunable magnetic anisotropy

Monolayer MX2 (M = Cr, Mn; X = Se, Te) with a Square Lattice: A Ferromagnetic Half-Metal with High Curie Temperature

CrP2Se6 monolayer: Two-dimensional intrinsic ferromagnetic half-metal with large magnetic anisotropy and high Curie temperature

Two-dimensional Cr-based ferromagnetic semiconductor: Theoretical simulations and design

Prediction of Two-Dimensional Janus Transition-Metal Chalcogenides: Robust Ferromagnetic Semiconductor with High Curie Temperature

Two-dimensional Ferromagnetic Superlattices.

Intrinsic room-temperature ferromagnetism in two-dimensional ternary transition metal tellurides CrX2Te4 (X = Al, Ga, and In)

Intrinsic Ferromagnetic Semiconductors in Two-Dimensional Alkali-Based Chromium Chalcogenides

Composition‐Dependent Magnetic Ordering in Freestanding 2D Non‐van der Waals Cr 2 Te x Se 3− x Crystals

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

Prediction of Novel 2D Intrinsic Ferromagnetic Materials with High Curie Temperature and Large Perpendicular Magnetic Anisotropy

The intrinsic ferromagnetic half-metals with high Curie temperature of tetragonal XCrS4 (X=Ti, Zr) monolayer

High-temperature ferromagnetism and ferroelasticity in ultraflexible atomically thin square-shaped lattices

Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers

Crxte3 (X = Si, Ge) Nanosheets: Two Dimensional Intrinsic Ferromagnetic Semiconductors

High Temperature Ferromagnetic metal: Janus CrSSe monolayer

Curie Temperature of Emerging Two-Dimensional Magnetic Structures

Two-dimensional van der Waals ferromagnetic thin film CrTe2 with high Curie temperature and metallic conductivity

Room-temperature Ferromagnetism, Half-metallicity and Spin Transport in Monolayer CrSc2Te4-Based Magnetic Tunnel Junction Devices