Microstructure and Room Temperature Ferromagnetism of Double-Layered MnxGe1−xTe Polycrystalline Modified by the Space-Layer Thickness

Dingzhang Wu,Chunjiang Lu,Xinpeng He,Xiaoxiao Duan,Junhong Lv,Xinze Lv,Jie Yang,Shaoying Ke,Feng Lin,Chong Wang

DOI: https://doi.org/10.1016/j.apsusc.2024.159837

IF: 6.7

2024-01-01

Applied Surface Science

Abstract:Dilute magnetic semiconductor (DMS) nanomaterials have broad application prospects in spin electronics, but low Curie temperatures ( T C ) hinders their applications. In this work, Mn x Ge 1-x Te (MGT) polycrystalline with a double -layer structure were fabricated on Si (1 00) substrates using ion beam sputtering. When compared to single -layer sample, the double -layer polycrystalline formed uneven stress distribution on the surface and preferred nucleation site, thus promoting the growth of the MGT polycrystalline. The saturation magnetization ( M S ) and remanent magnetization ( M R ) of double-layered polycrystalline were measured to be 4.43 x 10 -5 emu/ mm 2 and 1.05 x 10 -5 emu/mm 2 , respectively, and the T C reached 373.5 K. When comparing it to the single -layer sample, on the one hand, the double -layer sample shows enhanced magnetic properties and strain due to the increased Ge content. On the other hand, the quantum confinement effect and the relative strength of the Ge -Ge bond will affect the magnetic properties of the double -layer sample. In summary, the work not only provides a feasible way to improve the magnetic performance of DMS, but also improves the temperature application range of high -performance devices where polycrystalline are compatible with traditional complementary oxide metal (CMOS) technology.