Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping

On compensation in Si-doped AlN

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Self-compensation due to point defects in Mg-doped GaN

Compensation Phenomena In Gaas Implanted With 1 Mev Silicon Ions

Residual Donors and Compensation in Metalorganic Chemical Vapor Deposition As-Grown N-Gan

Layer disordering and doping compensation of an intersubband AlGaN/AlN superlattice by silicon implantation

Compensation of p-type doping in Al-doped 4H-SiC

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Interaction Between Si Doping and the Polarization-Induced Internal Electric Field in the Algan/Gan Superlattice

The Difference of Si Doping Efficiency in GaN and AlGaN in GaN‐based HBT Structure

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Geometry-induced electron doping in periodic semiconductor nanostructures

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy