Interaction Between Si Doping and the Polarization-Induced Internal Electric Field in the Algan/Gan Superlattice

Wei Zhang,Yue Zhang,JunShuai Xue,Ying Zhang,Ling Lv,JinCheng Zhang,Yue Hao

DOI: https://doi.org/10.1063/1.3655469

IF: 4

2011-01-01

Applied Physics Letters

Abstract:AlGaN/GaN superlattices (SLs) with and without Si doping exhibit very different properties. Because of the difference between the dielectric constants of AlGaN and GaN, the wells of the SL are depleted in the undoped structure. With increased Si doping in the GaN wells, the depletion effect will vanish, and the accumulation of electrons will compensate for the polarization-induced internal electric field (PIIEF) in the AlGaN barrier, which is followed by disturbance of the PIIEF in the GaN wells due to electron overflow from the ground state E0 to the first excited state E1. This leads to a decrease in E1-E0.