Abstract:We explore structural, electronic, and magnetic properties of two-dimensional (2D) gallium nitride (GaN) monolayer (ML) doped with different elements belonging to the groups III–VI, using density functional theory (DFT) with the Perdew–Burke–Ernzerhof (PBE) functional and the screened hybrid functional (HSE06) approaches as well as molecular dynamics (MD) simulations. Dopant interactions in Ga- and N-rich environments are investigated by varying their concentrations from 1.38 to 5.5%. Our calculations reveal that oxygen and aluminum impurities are the most preferred candidates under Ga- and N-rich conditions, respectively. The electronic structure studies indicate that dopants containing an even number of valence electrons introduce magnetic behavior with spin-polarized properties, or n-type conductivity with nonmagnetic features, depending on the stoichiometric III/V ratio during growth. Dopants with an odd number of valence electrons modify the GaN ML band structure from indirect to direct bandgap at the Γ point, depending on dopant types at different III/V ratios as well as substitutional site. The calculated charge transfer explains the dopants’ influence on the band structure and bond nature. The HSE calculations of doped g-GaN MLs show a 0.23–1.48 eV increase in the band gaps including the spin-polarized band structures when compared with their PBE values. MD calculations suggest high structural stability at high growth temperatures. Such dopant-induced modifications in structural and physical properties of 2D GaN ML could potentially allow use of this material in diverse electronic, optoelectronic, and spintronic applications.

Impact of Dopants in GaN on the Formation of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure Field-Effect Transistors

Influence of Doping on the Two-Dimensional Electron Gas Distribution in Algan/Gan Heterostructure Transistors

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

Influence of Polarizations and Doping in AlGaN Barrier on the Two-Dimensional Electron-Gas in AlGaN/GaN Heterostruture

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson–Schrödinger Calculations

Designing Two-Dimensional Electron Gas in AlGaN/InGaN/GaN Heterostructures Through the Incorporated InGaN Layer

Tuning the Electronic Properties of Hexagonal Two-Dimensional GaN Monolayers via Doping for Enhanced Optoelectronic Applications

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

Two-dimensional electron gas density in high Al content AlxGa1-xN/GaN double heterostructure

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Theoretical Study of Improved Two‐dimensional Electron Gas Density in AlGaN/GaN/AlGaN Double Heterostructure