Abstract:GdN is a ferromagnetic semiconductor which has seen increasing interest in the preceding decades particularly in the areas of spin- and superconducting- based electronics. Here we report a detailed computational study and optical spectroscopy study of the electronic structure of stoichiometric and nitrogen vacancy doped GdN. Based on our calculations we provide the effective mass tensor for undoped GdN, and some indicative values for electron doped GdN. Such a property is valuable as it can directly affect device design, and be directly measured experimentally to validate the existing computation results.

What problem does this paper attempt to address?

This paper mainly explores the electronic structure of gadolinium nitride (GdN), a ferromagnetic semiconductor, particularly the spin polarization and anisotropic effective mass in its conduction band. GdN has attracted attention due to its potential in spintronics and superconducting electronics. The study includes detailed calculations and spectroscopic investigations of GdN with both perfect lattice and nitrogen vacancies. The authors calculate the effective mass tensor of undoped GdN and provide indicative values for nitrogen-doped cases. These properties are crucial for device design and can be directly verified through experiments. The study also compares the calculated results with experimental optical bandgap, indicating that the conduction band is formed by the 5d states of Gd and the valence band is formed by the 2p states of nitrogen, with significant spin splitting. The paper mentions that electron doping can be introduced in GdN through nitrogen vacancy, which changes the Fermi level and affects electron transport. When the Fermi level enters the conduction band, the material's conductivity properties change. GdN has received attention for its applications in superconducting spintronics devices, such as weak links in Josephson junctions. However, traditional metal-based Josephson junctions have slow speed and are not suitable for high-speed operation, while GdN offers a potential solution. The study also investigates film preparation and optical properties through experimental growth and optical spectroscopy methods. It finds that even in so-called pure GdN, there may be a large number of localized carriers, which could influence its optical properties and related electrical characteristics. In summary, the paper aims to fill the gap in the past decade's research on GdN electronic structure calculations, providing more accurate material parameters for experimenters and engineers in device design.

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