Abstract:Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study mapping the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular-beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band-structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density-functional theory (DFT) calculations. ARPES shows a hole-carrier rich, topologically trivial, semimetallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum-well states. DFT-predicted Fermi wave vectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole-carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. https://doi.org/10.1103/PhysRevMaterials.6.L121201 ©2022 American Physical Society

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

Spin polarisation and non-isotropic effective mass in the conduction band of GdN

Ferromagnetic redshift of the optical gap in GdN

Gd-implanted GaN As a Candidate for Spin Injector

First-principles study on the electronic structures of Gd pnictides

Spin Properties of the Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Spin Valve Effect in CrN/GaN Van Der Waals Heterostructures

Magnetic Field-Driven Spin-Flop Transition in Orthorhombic GdGa

Recent Progress Towards the Development of Ferromagnetic Nitride Semiconductors for Spintronic Applications

Spin Gapless van der Waals Heterostructure for Spin Gating Through Magnetic Injection Device

GdFe-based nanostructured thin films with large perpendicular magnetic anisotropy for spintronic applications

Ab-initio study of ultrafast spin dynamics in Gdx(FeCo){1-x} alloys

Thermally generated magnonic spin currents in a polycrystalline gadolinium iron garnet thin film with perpendicular magnetic anisotropy

Efficient spin transport in a paramagnetic insulator

X-ray reciprocal space mapping analysis of ferromagnetic GdN films grown by pulsed laser epitaxy

The Effects of Substrate Temperature on the Growth, Microstructural and Magnetic Properties of Gadolinium-Containing Films on Aluminum Nitride

GdN thin-film: Chern Insulating State on Square Lattice

Transport and Spin Properties of the Two-Dimensional Electron Gas in GaN-based Heterostructures

Spin filtering effect, thermal spin diode effect and high tunneling magnetoresistance in the Au/GdI2/Au van der Waals junction

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films