Abstract:This article describes progress towards producing prototype magnetoelectronic structures based on III–N semiconductor materials. We focus on the materials properties connected with the key physical phenomena underlying potential spintronic devices: producing, injecting, transporting, manipulating and detecting spin‐polarized electron populations. Our experiments have shown that the maximum magnetic moment is realized for a composition of Ga0.97Cr0.03N and a substrate growth temperature of ∼1050 K. Ion channeling experiments show that ∼90% of Cr sits substitutionally on the cation site. The highest measured magnetization was 1.8μB/Cr atom (∼60% of the expected moment from band theory for ideal material) with the Curie temperature over ∼900 K. This strongly suggests a link between the CrGa impurity band and ferromagnetism and suggests that a double‐exchange‐like mechanism is responsible for the ferromagnetic ordering. The transport properties of spin‐polarized charge carriers were modeled theoretically taking into account both the Elliott–Yafet and the D'yakonov–Perel' scattering mechanisms. We include the spin–orbit interaction in the unperturbed Hamiltonian and treat scattering by ionized impurities and phonons as a perturbation. Our numerical calculations predict two orders of magnitude longer electron spin relaxation times and an order of magnitude shorter hole spin relaxation times in GaN than in GaAs. First‐principles electronic structure calculations predict that efficient spin injection can be achieved using a ferromagnetic GaN:Cr electrode in conjunction with an AlN tunnel barrier. In this structure, the electrode is found to be half‐metallic up to the interface and is thus a candidate for high‐efficiency magnetoelectronic devices. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Gd-implanted GaN As a Candidate for Spin Injector

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Recent Progress Towards the Development of Ferromagnetic Nitride Semiconductors for Spintronic Applications

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering

Magnetic and structural properties of Fe-implanted GaN at room temperature

High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier

Significant enhancement of magnetic anisotropy and conductivity in GaN / CrI 3 van der Waals heterostructures via electrostatic doping

Spin polarisation and non-isotropic effective mass in the conduction band of GdN

Spin Injection into Heavily-Doped N-Gan Via Schottky Barrier

Significant Enhancement of Magnetic Anisotropy and Conductivity in GaN/CrI3 Van Der Waals Heterostructures Via Electrostatic Doping

Interfacial magnetic characteristics of nearly compensated gadolinium iron garnet

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Spin Injection, Relaxation, and Manipulation in GaN-based Semiconductors

The Compositional, Structural, and Magnetic Properties of a Fe3O4/Ga2O3/GaN Spin Injecting Hetero-Structure Grown by Metal-Organic Chemical Vapor Deposition

Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

First-principles study on the electronic structures of Gd pnictides

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

The Unexpected Magnetism in 2D Group-Iv-doped GaN for Spintronic Applications

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Large and Robust Electrical Spin Injection into GaAs at Zero Magnetic Field Using an Ultrathin CoFeB/MgO Injector

Spin Valve Effect in VN/GaN/VN Van Der Waals Heterostructures