J. Aaron Mendoza-Rodarte,Katarzyna Gas,Manuel Herrera-Zaldívar,Detlef Hommel,Maciej Sawicki,Marcos H.D. Guimarães
Abstract:Diluted magnetic semiconductors (DMS) have attracted significant attention for their potential in spintronic applications. Particularly, magnetically-doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance finding $G_r = 2.6\times 10^{14} \, \Omega^{-1} m^{-2}$, comparable to state-of-the-art yttrium iron garnet (YIG)/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in new spintronic devices.
What problem does this paper attempt to address?
The key problem that this paper attempts to solve lies in evaluating and understanding the spin Hall magnetoresistance (SMR) effect in Pt/(Ga,Mn)N heterostructures, in order to reveal its potential in spin transport. Specifically, the main research objectives include:
1. **Evaluating interface spin - transport characteristics**: By measuring SMR, the spin - mixing conductance at the Pt/(Ga,Mn)N interface is determined. This is an important parameter for measuring the efficiency of spin - information transmission through the interface. Research shows that the real part of the spin - mixing conductance at this interface, \( G_r = 2.6\times10^{14}\,\Omega^{-1}\text{m}^{-2} \), is comparable to that of the state - of - the - art yttrium iron garnet (YIG)/Pt interface.
2. **Exploring spin - current generation and detection at high temperatures**: Through temperature - dependent SMR measurements, the magnetic order in the region above the Curie temperature (\( T_C \)) of (Ga,Mn)N was studied. This provides a wider temperature range for efficient generation and detection of spin currents, thereby relaxing the conditions for the application of materials in spintronic devices.
3. **Verifying the feasibility of spin - orbit torque (SOT) applications**: The research results show that (Ga,Mn)N - based diluted magnetic semiconductors (DMS) have great potential in spintronic and magnonic applications, especially in non - volatile magnetic storage and low - power - consumption information processing.
### Specific problems and solutions
- **Problem 1: Insufficient interface spin transparency**
**Solution**: The spin - mixing conductance of the interface was determined through SMR measurements, proving that this interface has high spin transparency and is suitable for efficient spin transport.
- **Problem 2: Stability and reliability of spin currents at high temperatures**
**Solution**: The research found that even above \( T_C \), (Ga,Mn)N can still effectively generate and detect spin currents, expanding its operating temperature range in practical applications.
- **Problem 3: Limitations of the performance of existing spintronic devices**
**Solution**: By studying the spin - transport characteristics of Pt/(Ga,Mn)N heterostructures, the potential advantages of this material in spin - orbit torque (SOT) devices were demonstrated, providing theoretical basis and technical support for the development of new spintronic devices.
In conclusion, through detailed research on Pt/(Ga,Mn)N heterostructures, this paper has solved some key problems in the current spintronics field and laid the foundation for further development of high - performance spintronic devices.