Abstract:Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine the semi-insulating behavior of carbon-doped GaN (GaN:C) layers and are still debated. Two models are discussed; both can theoretically achieve semi-insulating behavior: the dominant acceptor model (DAM, DAR < 1) and the auto-compensation model (ACM, DAR = 1). We perform a capacitance–voltage analysis on metal/GaN:C/nGaN (n-doped GaN) structures, exhibiting Fermi-level pinning in GaN:C, 0.7 eV above the valence band maximum. This observation coupled with further interpretation clearly supports the DAM and contradicts the ACM. Furthermore, we reveal a finite depletion width of a transition region in GaN:C next to nGaN, where carbon acceptors drop below the Fermi level becoming fully ionized. Calculation of the potential drop in this region exhibits DAR values of 0.5–0.67 for GaN:C with total carbon concentrations of 10 18 cm − 3 and 10 19 cm − 3. Based on those results, we re-evaluate formerly published density functional theory (DFT)-calculated formation energies of point defects in GaN. Unexpectedly, growth in thermodynamic equilibrium with the bulk carbon phase contradicts our experimental analysis. Therefore, we propose the consideration of extreme carbon-rich growth conditions. As bulk carbon and carbon cluster formation are not reported to date, we consider a metastable GaN:C solid solution with the competing carbon bulk phase being kinetically hindered. DFT and experimental results agree, confirming the role of carbon at nitrogen sites as dominant acceptors. Under N-rich conditions, carbon at gallium sites is the dominant donor, whereas additional nitrogen vacancies are generated under Ga-rich conditions.

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

The Movement of the Fermi Level in Heavily C Doped GaN

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Migration of Carbon from Ga Sites to N Sites in GaN: a Combined PAS and Hybrid DFT Study

Influence of Intrinsic or Extrinsic Doping on Charge State of Carbon and Its Interaction with Hydrogen in GaN

Direct Evidence of Hydrogen Interaction with Carbon: C–H Complex in Semi-Insulating GaN

Analysis of Electrical and Optical Properties of g-C3N4 with Carbon-Position Doping

A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Optical Characteristics of C-Doped GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

High Mobility GaN Drift Layer on Si Substrates: the Role of Surface N Vacancy on Carbon Incorporation

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.