Self-doping effects and carrier mobility of the H-GaN-F and h-BN stacking hetero-structures
Ke Qin,Enling Li,Fangping Wang,Zhen Cui,Yang Shen,Deming Ma
DOI: https://doi.org/10.1016/j.mssp.2024.108229
IF: 4.1
2024-02-12
Materials Science in Semiconductor Processing
Abstract:The self-doping effects induced by the 2D polarized material have presented a novel doped strategy, which can simplify the preparation of electronic and optoelectronic devices. Herein, the self-doping effects, band alignments, and carrier mobilities ( μ ) of the hydro-fluorination buckled GaN (H-GaN-F) and h-BN monolayer stacking hetero-structures have been systematically explored based on the density functional theory (DFT). Due to the asymmetry of the structure, the intrinsic polarization exhibits in the H-GaN-F monolayer (GaN-M) and is stronger in the H-GaN-F bilayer (GaN-B). For the GaN/h-BN hetero-structures, driven by the downward polarization of the H-GaN-F, the H-GaN-F exhibits p -doping characteristics owing to the hole injection, and the h-BN monolayer is n -doped owing to the electron injection. The doping type of the H-GaN-F and the h-BN monolayer can be controlled by the reversal of the polarization direction of the H-GaN-F. The band alignments of the h-BN/GaN hetero-structures are type-III, leading to the formation of self-doping p-n junctions in the h-BN/GaN hetero-structures. The high carrier concentration ( n ) of 9.60 × 10 13 e cm −2 is obtained due to the large charge transfer in the h-BN/GaN-B hetero-structure. The high μ of 10.50 × 10 3 cm 2 V −1 s −1 is obtained in the GaN-B/h-BN hetero-structure. Our work illustrates a novel approach to doping to 2D GaN-based (or polar) materials, providing a theoretical basis for streamlining and designing the production of the 2D electronic nanodevice device.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied