Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

The Mn site in Mn-doped Ga-As nanowires: an EXAFS study

Microstructure of (ga,mn)as∕gaas Digital Ferromagnetic Heterostructures

Site Occupation and Electronic-Structure of an Interstitial Mn2+ Impurity in Gap

Mn Clusterisation in Ga1-Xmnxn

STM images of sub-surface Mn atoms in GaAs: evidence of hybridization of surface and impurity states

Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs

Local atomic structure around Mn ions in GaN:Mn thin films: Quantitative XANES analysis

Mapping the wavefunction of transition metal acceptor states in the GaAs surface

Determination Of Interface Structure And Atomic Arrangements For Strained Inas/Ga1-Xinxsb Superlattices By High-Resolution Transmission Electron Microscopy

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

About anomalous g-factor value of Mn related defects in GaAs:Mn

Evaluation of the in Concentration of an InxGa1−xSb Alloy Layer in Cross-Sectional HRTEM Images of III–V Semiconductor Superlattices

Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

The Study of Defects in Ga0.946Mn0.054As by X-ray Absorption Spectra

Electronic and Magnetic Properties of Ga1-Xmnxas: Role of Mn Defect Bands

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As