Abstract:Relaxed InyGa1_yAs epilayers grown on (0 0 1) GaAs are known to exhibit a cross-hatched surface with ridges running along the [1 1 0] and 1⁄21 % MnxAs epilayers grown on such buffer layers can 1 0] directions. We find that Ga1_x have as-grown Curie temperatures (TC) that are higher than the as-grown 110 K value typical of Ga1_xMnxAs/GaAs heterostructures. Further, low-temperature annealing leads to only modest additional increases in TC; contrasting with the behavior in Ga1_xMnxAs/GaAs where TC typically increases significantly upon annealing. Our observations suggest that the initial concentration of Mn interstitials in as-grown Ga1_xMnxAs /InyGa1_yAs heterostructures is smaller than that in as-grown Ga1_xMnxAs/GaAs heterostructures. We propose that strain-dependent diffusion may drive Mn interstitials from the bulk of the growing crystal to more benign locations on the ridged surface, providing a possible route towards defect-engineering in these materials. There is wide interest in the diluted magnetic semiconductor Ga1_xMnxAs for exploring proof of-concept applications in semiconductor spintro nics [1]. Ga1_xMnxAs is grown by low-tempera ture molecular beam epitaxy (LT-MBE), usually on GaAs (1 0 0) substrates, and exhibits ferromag netism for 0:02oxo0:09 with the ferromagnetic onding author. Tel.: +1-8148630136; fax: +1 7. address: nsamarth@psu.edu (N. Samarth). transition temperature (TC) ranging up to B110 K for as-grown samples. Post-growth annealing at low temperatures (180°C oTannealo260C) can increase TC up to B160 K [2–4]. The enhancement of TC is attributed to the migration of Mn interstitials (MnI) from the bulk of the sample to the surface; this reduces the compensation of exchange-mediating holes by these interstitial defects and hence increases TC [5,6]. This hypoth esis is also supported by scanning tunneling microscopy of the Ga1_xMnxAs surface [7] and

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