Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

V. Stanciu,P. Svedlindh

DOI: https://doi.org/10.1063/1.2123380

2005-05-12

Abstract:The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.

Materials Science

What problem does this paper attempt to address?

This paper aims to study the influence of annealing parameters (temperature and time) on the magnetic anisotropy of manganese - doped gallium arsenide ((Ga,Mn)As) epitaxial layers. Specifically, the author explored the following issues:

1. **Change in magnetic anisotropy**: In the unannealed samples, the magnetic anisotropy is mainly along the \[ \left[ \overline{110} \right] \] direction; after annealing treatment, the magnetic anisotropy direction changes to the \[ \left[ 110 \right] \] direction. This change is closely related to the change in carrier concentration during the annealing process.

2. **Influence of carrier concentration**: The annealing process not only affects the direction of magnetic anisotropy but also significantly changes the carrier concentration. In particular, when the annealing temperature is close to the growth temperature (\( T_g \)), the hole concentration can be significantly increased in a short time, resulting in a 90 - degree rotation of the magnetic anisotropy.

3. **Exploration of microscopic mechanisms**: The author experimentally verified that Mn interstitial defects (Mn_I) diffuse outward and are passivated on the free surface during the annealing process, thereby increasing the ferromagnetic transition temperature (\( T_C \)), carrier concentration, and average manganese magnetic moment. In addition, they also explored the effects of tetragonal distortion and triple distortion on magnetic anisotropy, pointing out that triple distortion may be caused by surface As dimerization, resulting in the non - equivalence of the \[ \left[ 110 \right] \] and \[ \left[ \overline{110} \right] \] directions.

4. **Application of theoretical models**: The p - d Zener model was used to explain the experimentally observed uniaxial anisotropy, and the triple - distortion parameter \( \epsilon_{xy} = 0.05\% \) was estimated, which is sufficient to explain the experimental results.

In conclusion, this paper reveals the important influence of annealing parameters on the magnetic anisotropy of (Ga,Mn)As through systematic research and deeply explores the underlying physical mechanisms.