Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

S. J. Potashnik,K. C. Ku,S. H. Chun,J. J. Berry,N. Samarth,P. Schiffer

DOI: https://doi.org/10.1063/1.1398619

2001-05-29

Abstract:We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing at the optimal temperature of 250 C for less than 2 hours significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga1-xMnxAs to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the influence of annealing time on the defect - controlled ferromagnetism in Ga\(_{1 - x}\)Mn\(_x\)As materials. Specifically, the researchers hope to reveal the relationship between the magnetic, electronic and structural properties of Ga\(_{1 - x}\)Mn\(_x\)As thin films under different annealing times and the internal defects of the materials by studying these properties, and find the optimal annealing conditions for optimizing their ferromagnetism and conductivity.

### Research Background
Ga\(_{1 - x}\)Mn\(_x\)As is an important diluted magnetic semiconductor material, which is widely used in spintronic devices. The Mn ions in this material provide holes and mediate ferromagnetic coupling, but these holes will be compensated by the defects (such as arsenic antisite defects) generated during the low - temperature molecular beam epitaxy (MBE) growth process. This results in a significant impact on the ferromagnetic transition temperature (\(T_c\)) and conductivity of the material.

### Research Questions
1. **Influence of Annealing Time on Magnetic, Conductive and Structural Properties**: The researchers hope to understand the specific influence of different annealing times on the magnetic, conductive and lattice constant of Ga\(_{1 - x}\)Mn\(_x\)As thin films at 250°C.
2. **Defect Evolution Mechanism**: By analyzing the changes in material properties before and after annealing, the researchers attempt to reveal the defect evolution mechanism during the annealing process and its influence on ferromagnetism.
3. **Optimizing Ferromagnetism and Conductivity**: Look for the optimal annealing time to maximize the ferromagnetic transition temperature (\(T_c\)) and conductivity, so as to provide guidance for practical applications.

### Main Findings
- **Short - time Annealing (< 2 hours)**: Annealing can significantly enhance the conductivity and ferromagnetism of the material. \(T_c\) increases from 65K to 101K, while the resistivity decreases and the carrier concentration increases.
- **Long - time Annealing (> 2 hours)**: Continued annealing will suppress ferromagnetism and conductivity. \(T_c\) gradually decreases, the resistivity increases, and the carrier concentration decreases.
- **Two - stage Evolution Process**: The research results show that there are two different defect evolution processes during the annealing process. In a short time, the movement and recombination of defects enhance ferromagnetism; while after a long time, the aggregation of Mn ions suppresses ferromagnetism.

### Conclusion
The research reveals that the annealing time has a complex influence on the defect - controlled ferromagnetism in Ga\(_{1 - x}\)Mn\(_x\)As materials. By optimizing the annealing time, the ferromagnetism and conductivity of the material can be regulated to a certain extent, which is of great significance for the development of high - performance spintronic devices. Further research needs to understand the microstructure of defects and their dynamic evolution process in more detail.