Abstract:(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high dopings significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approximately 8% of Mn_Ga. Our study elucidates the mechanism controlling the removal of the most detrimental, interstitial Mn defect. The limits and utility of electrical gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so far electric-field effects have been demonstrated on magnetization with tens of Volts applied on a top-gate, field effect transistor structure. In the second part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial density of carriers) of the (Ga,Mn)As and observe a large enhancement of the gating efficiency. We report gatable spintronic characteristics on a series of anisotropic magnetoresistance measurements.

Capping-induced suppression of annealing in Ga(1-x)Mn(x)As epilayers

Effects of Capping on the (Ga,Mn)As Magnetic Depth Profile

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

Effect of Substrate Orientation on Magnetic Properties of (ga, Mn)As

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Cosmic Structure Traced by Precision Measurements of the X-Ray Brightest Galaxy Clusters in the Sky

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy

Effect of annealing on the magnetic anisotropy of GaMnAsP layers with graded P concentration

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting