Abstract:The temperature dependence of magnetic anisotropy in (113)A (Ga,Mn)As layers grown by molecular beam epitaxy is studied by means of superconducting quantum interference device (SQUID) magnetometry as well as by ferromagnetic resonance (FMR) and magnetooptical effects. Experimental results are described considering cubic and two kinds of uniaxial magnetic anisotropy. The magnitude of cubic and uniaxial anisotropy constants is found to be proportional to the fourth and second power of saturation magnetization, respectively. Similarly to the case of (001) samples, the spin reorientation transition from uniaxial anisotropy with the easy along the [-1, 1, 0] direction at high temperatures to the biaxial <100> anisotropy at low temperatures is observed around 25 K. The determined values of the anisotropy constants have been confirmed by FMR studies. As evidenced by investigations of the polar magnetooptical Kerr effect, the particular combination of magnetic anisotropies allows the out-of-plane component of magnetization to be reversed by an in-plane magnetic field. Theoretical calculations within the p-d Zener model explain the magnitude of the out-of-plane uniaxial anisotropy constant caused by epitaxial strain, but do not explain satisfactorily the cubic anisotropy constant. At the same time the findings point to the presence of an additional uniaxial anisotropy of unknown origin. Similarly to the case of (001) films, this additional anisotropy can be explained by assuming the existence of a shear strain. However, in contrast to the (001) samples, this additional strain has an out-of-the-(001)-plane character.

Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Origin of Ferromagnetism in Self-Assembled Ga1−xMnxAs Quantum Dots Grown on Si

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Morphology and Magnetic Properties of InMnAs Nanodots and Nanowires with Ultrahigh Mn Concentrations

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Room-temperature Ferromagnetism in Self-Assembled (in, Mn)As Quantum Dots

An Ab Initio Investigation on the Zinc-Blende MnAs Nanocrystallite

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping

Existence and Atomic Arrangement of Microtwins in Hexagonal Mnas Ferromagnetic Epilayers Grown on Gaas (100) Substrates with Monolayer Inas Buffers

Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Surface Magnetism of One Monolayer Mn Atoms on GaAs(001) Surface