Abstract:An eight-band (k) over right arrow.(p) over right arrow effective-mass Hamiltonian for narrow-gap zinc-blende semiconductor nanowires in the magnetic field is derived, and then the electronic structures of Mn-doped InAs nanowires are calculated via the derived Hamiltonian. Through the calculation, it is found that the valence band structures of Mn-doped InAs nanowires can be changed greatly when R increases from 3 nm to 10 nm, and the energy interval between two neighbouring valence subbands will become narrower as the increase of the radius R. Meanwhile, we find the ground hole state of Mn-doped InAs nanowires is h(0)(-1/2) in the magnetic field, and the valence band structures will present strong band-crossings because of the behaviors of two special hole states h(0)(-3/2) and h(0)(3/2). Additionally, the split energies of the degenerate hole states will saturate at a certain temperature when the temperature T increases to 300 K, while the split energies can up to dozens of meV linearly when the concentration of manganese ions x increases to 0.02. However, the variations of T and x has little influences on the split energies of the degenerate electron states. Finally, we also study the radial probability densities of the electron states and the hole states in Mn-doped InAs nanowires. Surprisingly, a few of peaks will arise in the radial probability densities of the electron states, while there are only one or two peaks in the radial probability densities of the hole states. (C) 2016 Elsevier Ltd. All rights reserved.

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