Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Voids and Mn-rich inclusions in a (Ga,Mn)As ferromagnetic semiconductor investigated by transmission electron microscopy

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Study of the Transport Properties of Annealed (ga,mn)as by X-Ray Absorption Spectroscopy

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

An Ab Initio Investigation on the Zinc-Blende MnAs Nanocrystallite

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

The Study of Defects in Ga0.946Mn0.054As by X-ray Absorption Spectra

Enhancement of Ferromagnetic Transition Temperature in (Ga, Mn) As by Post-Growth Annealing

Room-temperature ferromagnetic MnGa nanoparticles in dilute magnetic semiconductor (Ga, Mn)As thin film: preparation and characterization

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Room temperature ferromagnetic-like behavior in Mn-implanted and post-annealed InAs layers deposited by Molecular Beam Epitaxy