Abstract:Diluted magnetic semiconductors are a recent research area due to their ability to enhance ferromagnetic properties and facilitate the electrical detection of magnetoresistance and polarization. (In, Mn)As dilute magnetic semiconductor has potential application in the field of spintronic devices, such as spin field-effective transistors, spin laser light-emitted diodes, modern technology, multi-functional devices, green technology, and nanotechnology. For this study, we have considered the RKKY interaction between Mn 2+ spins via delocalized carriers. The effect of manganese ion concentration and applied magnetic field on ferromagnetic diluted magnetic semiconductor properties such as dispersion relation, Curie temperature, and reduced magnetization of (In, Mn)As are studied. We have developed a spin-wave model using the Holstein-Primakaff transformation. Based on the developed model, the number of ferromagnetic magnons, dispersion relations, and Curie temperatures were calculated with or without an applied magnetic field. The reduced magnetization is also calculated. The graph of Curie temperature and magnetization of (In,Mn)As versus temperature with applied field up to 6 T and manganese ion concentration from 0.01 to 0.1 are plotted. The graph of spin wave dispersion of (In,Mn)As versus a wave vector with varying manganese ion concentration with and without an applied magnetic field up to 6 T. In this study, an InMnAs Curie temperature of 290.68 K is found without an applied magnetic field with a 0.1 manganese ion concentration, which is near room temperature. Moreover, with an applied magnetic field of 6 T at 0.1 manganese ion concentration, a Curie temperature of 342.466 K is found, which is above room temperature. Hence, these temperatures are suitable for the field of next-generation spintronic new technology.

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Theoretical study on the effects of Mn ion doping and applied magnetic field in (In,Mn)As

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Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE

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Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

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