(In0.52al0.48)1−xmnxas Diluted Magnetic Semiconductor Grown on InP Substrates

W N Lee,Y F Chen,Jinhua Huang,Xing Guo,Chun‐Yan Kuo,Tsung‐Shune Chin,H. C. Ku
DOI: https://doi.org/10.1088/0953-8984/18/1/l03
2005-01-01
Journal of Physics Condensed Matter
Abstract:A series of diluted magnetic semiconductors, (In0.52Al0.48)1−xMnxAs (0< x≤0.11), was successfully grown on InP substrate by low-temperature molecular beam epitaxy. Our results indicate that (In0.52Al0.48)1−xMnxAs exhibits interesting magnetic behaviours at 5 K: it shows paramagnetic-like behaviour when x≤0.05 and ferromagnetic behaviour when x≥0.06.
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