Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

The Langevin Equation for a Quantum Heat Bath

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

(In, Mn)As Nanowires with Ultrahigh Mn Concentration: Growth, Morphology and Magnetic Anisotropy

Magnetic anisotropy of epitaxial (Ga,Mn)As on (113)A GaAs

Growth and magnetic properties of self-assembled (In, Mn)As quantum dots

Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy

Morphology and Magnetic Properties of InMnAs Nanodots and Nanowires with Ultrahigh Mn Concentrations

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Stoichiometric growth of high Curie temperature heavily-alloyed GaMnAs

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Self-Assembly and Magnetic Properties of Mnas Nanowires on Gaas(001) Substrate

Effect of Substrate Orientation on Magnetic Properties of (ga, Mn)As

Mn Behavior In Ge0.96mn0.04 Magnetic Thin Films Grown On Si

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

XPS Study of Mn Thin Films Grown on GaAs001 Surfaces