(In, Mn)As Nanowires with Ultrahigh Mn Concentration: Growth, Morphology and Magnetic Anisotropy

F. Xu,P. W. Huang,J. H. Huang,R. T. Huang,W. N. Lee,T. S. Chin,Y. W. Du
DOI: https://doi.org/10.1016/j.ssc.2010.10.038
IF: 1.934
2011-01-01
Solid State Communications
Abstract:(In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [−110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires.
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