Morphology and Magnetic Properties of InMnAs Nanodots and Nanowires with Ultrahigh Mn Concentrations

F. Xu,P. W. Huang,J. H. Huang,W. N. Lee,T. S. Chin,H. C. Ku,S. D. Li
DOI: https://doi.org/10.1063/1.3537955
IF: 2.877
2011-01-01
Journal of Applied Physics
Abstract:In1−xMnxAs (0.22 ≤ x ≤ 0.55) nanostructures with ultrahigh Mn concentration were grown on GaAs(001) substrates by molecular beam epitaxy. When the growth is performed at 380 °C, nanodots are obtained. The M(T) relation of InMnAs nanodots is highly dependent on the morphology which is affected by Mn concentration. When the growth temperature is higher up to 550 °C, the shape transition from nanodots to nanowires takes place and well-shaped nanowires are obtained at high Mn concentrations. The formation of InMnAs nanowires brings about the in-plane uniaxial magnetic anisotropy, with the easy axis along the self-alignment orientation, namely, [1−10] GaAs.
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