Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Concentration-independent Local Ferromagnetic Mn Configuration Inga1−xmnxas

Mn Distribution and Spin Polarization Inga1−xmnxas

The Local Structure of Ga1-xMnxN Dilute Magnetic Semiconductors Determined by X-ray Absorption Near Structure

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

Ab Initio Study on the Electronic Structure and Magnetism of MnAs, MnSb, and MnBi

Mn Clusterisation in Ga1-Xmnxn

Mn Occupations in Ga1-Xmnxn Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Local Structures Around Mn Atoms in Mnxsi1-X Thin Films Probed by Fluorescence Xafs

Origin of the anomalous magnetic circular dichroism spectral shape in ferromagnetic (Ga,Mn)As: Impurity bands inside the band gap

Morphology and Magnetic Properties of InMnAs Nanodots and Nanowires with Ultrahigh Mn Concentrations

The Langevin Equation for a Quantum Heat Bath

Room-Temperature Ferromagnetism in Mg 1– x Mn 2+ x As 2 with Layered Structure

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

Mn doping concentration dependent p–d hybridization in Ga1−xMnxN

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Local atomic structure around Mn ions in GaN:Mn thin films: Quantitative XANES analysis

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Structural Study of Mnxsi1-X Magnetic Semiconductor Thin Films

Ferromagnetic Properties And Structures Of The Mn-Implanted Gaas Semiconductor

Studies on Structural and Magnetic Properties in Mn-Doped GaN