Abstract:Ga1-xMnxAs and related semiconductors are under intense investigation for the purpose of understanding the ferromagnetism in these materials, pursuing higher T-c, and, finally, for realizing semiconductor electronic devices that use both charge and spin. In this work, the electronic and magnetic structures of Ga1-xMnxAs (x=3.125%, 6.25%, 12.5%, 25.0%, 50.0%) are studied by first-principles full-potential linearized augmented plane wave calculations with the generalized-gradient approximation. The ferromagnetic state is lower in energy than the paramagnetic and antiferromagnetic states. It is confirmed that Mn atoms stay magnetic with well localized magnetic moments. The calculated band structure shows that Mn doping also forms defect bands, and makes (Ga,Mn)As p-type conducting by providing holes. Furthermore, an s-d population inversion is found in the Mn electronic configuration, which results from the strong Mn p-d mixing. The induced As moments are substantial (about -0.15 mu (B) per Mn atom, and almost independent of x)-in accord with a recent observed negative As magnetic circular dichroism signal.

Mn Clusterisation in Ga1-Xmnxn

Mn Occupations in Ga1-Xmnxn Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

The Local Structure of Ga1-xMnxN Dilute Magnetic Semiconductors Determined by X-ray Absorption Near Structure

Local Structure Around Mn Atoms in Cubic (ga,mn)n Thin Films Probed by Fluorescence Extended X-Ray Absorption Fine Structure

Mn Doping Concentration Dependent P–d Hybridization In

Electronic and Magnetic Properties of Ga1-Xmnxas: Role of Mn Defect Bands

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Concentration-independent Local Ferromagnetic Mn Configuration Inga1−xmnxas

Local atomic structure around Mn ions in GaN:Mn thin films: Quantitative XANES analysis

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Studies on Structural and Magnetic Properties in Mn-Doped GaN

The Structural, Electronic and Magnetic Properties of Ga8−Mn As8 Clusters

What Is The Valence Of Mn In Ga1-Xmnxn?

Mn Distribution and Spin Polarization Inga1−xmnxas

Structural and paramagnetic properties of dilute Ga1-xMnxN

Adsorption, Segregation and Magnetization of a Single Mn Adatom on the GaAs (110) Surface

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface