Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Mn as surfactant for the self-assembling of Al$_x$Ga$_{1-x}$N/GaN layered heterostructures

Structural and paramagnetic properties of dilute Ga1-xMnxN

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

A solid-state NMR and DFT study of compositional modulations in Al x Ga

Electronic structure and X-ray spectroscopy of Cu$_{2}$MnAl$_{1-x}$Ga$_{x}$

Local Structure Around Mn Atoms in Cubic (ga,mn)n Thin Films Probed by Fluorescence Extended X-Ray Absorption Fine Structure

Optical Properties of Gamnn Films Grown by Metal-Organic Chemical Vapor Deposition

Characteristics of High Al Content AlxGa1−xN Grown by Metalorganic Chemical Vapor Deposition

Mn Occupations in Ga1-Xmnxn Dilute Magnetic Semiconductors Probed by X-Ray Absorption Near-Edge Structure Spectroscopy

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Local atomic structure around Mn ions in GaN:Mn thin films: Quantitative XANES analysis

Mn Clusterisation in Ga1-Xmnxn