Abstract:Relaxed InyGa1_yAs epilayers grown on (0 0 1) GaAs are known to exhibit a cross-hatched surface with ridges running along the [1 1 0] and 1⁄21 % MnxAs epilayers grown on such buffer layers can 1 0] directions. We find that Ga1_x have as-grown Curie temperatures (TC) that are higher than the as-grown 110 K value typical of Ga1_xMnxAs/GaAs heterostructures. Further, low-temperature annealing leads to only modest additional increases in TC; contrasting with the behavior in Ga1_xMnxAs/GaAs where TC typically increases significantly upon annealing. Our observations suggest that the initial concentration of Mn interstitials in as-grown Ga1_xMnxAs /InyGa1_yAs heterostructures is smaller than that in as-grown Ga1_xMnxAs/GaAs heterostructures. We propose that strain-dependent diffusion may drive Mn interstitials from the bulk of the growing crystal to more benign locations on the ridged surface, providing a possible route towards defect-engineering in these materials. There is wide interest in the diluted magnetic semiconductor Ga1_xMnxAs for exploring proof of-concept applications in semiconductor spintro nics [1]. Ga1_xMnxAs is grown by low-tempera ture molecular beam epitaxy (LT-MBE), usually on GaAs (1 0 0) substrates, and exhibits ferromag netism for 0:02oxo0:09 with the ferromagnetic onding author. Tel.: +1-8148630136; fax: +1 7. address: nsamarth@psu.edu (N. Samarth). transition temperature (TC) ranging up to B110 K for as-grown samples. Post-growth annealing at low temperatures (180°C oTannealo260C) can increase TC up to B160 K [2–4]. The enhancement of TC is attributed to the migration of Mn interstitials (MnI) from the bulk of the sample to the surface; this reduces the compensation of exchange-mediating holes by these interstitial defects and hence increases TC [5,6]. This hypoth esis is also supported by scanning tunneling microscopy of the Ga1_xMnxAs surface [7] and

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Effect of Substrate Orientation on Magnetic Properties of (ga, Mn)As

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs

Enhancement of Curie temperature in Ga 1 _ x Mn x As epilayers grown on crosshatched In y Ga 1 _ y As buffer layers

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

New evidence for structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

The Effect of Low-Temperature Annealing on Ferromagnetic Ga 1−x Mn X As Thin Films Studied by Photoemission Spectroscopy

Cosmic Structure Traced by Precision Measurements of the X-Ray Brightest Galaxy Clusters in the Sky

Study of the Transport Properties of Annealed (ga,mn)as by X-Ray Absorption Spectroscopy

XPS Study of Mn Thin Films Grown on GaAs001 Surfaces

Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Magnetic Properties of (ga,mn)as (110) Epitaxial Films

The Study of Defects in Ga0.946Mn0.054As by X-ray Absorption Spectra

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

Microstructure of (ga,mn)as∕gaas Digital Ferromagnetic Heterostructures