Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Electronic- and band-structure evolution in low-doped (Ga,Mn)As

Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

The Langevin Equation for a Quantum Heat Bath

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Growth of and optical emission from GaMnAs thin films grown by molecular beam epitaxy

Electronic structure of Mn/GaAs studied by spectra of electron photoemission with synchrotron radiation

New evidence for structural and magnetic properties of GaAs:(Mn,Ga)As granular layers

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions