Abstract:The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic applications of (Ga,Mn)As, or other dilute magnetic semiconductors, remains their below room-temperature ferromagnetic transition temperature. Enhancing ferromagnetism in semiconductors requires understanding the mechanisms for interaction between magnetic dopants, such as Mn, and identifying the circumstances in which ferromagnetic interactions are maximized [5]. Here we report the use of a novel atom-by-atom substitution technique with the scanning tunnelling microscope (STM) to perform the first controlled atomic scale study of the interactions between isolated Mn acceptors mediated by the electronic states of GaAs. High-resolution STM measurements are used to visualize the GaAs electronic states that participate in the Mn-Mn interaction and to quantify the interaction strengths as a function of relative position and orientation. Our experimental findings, which can be explained using tight-binding model calculations, reveal a strong dependence of ferromagnetic interaction on crystallographic orientation. This anisotropic interaction can potentially be exploited by growing oriented Ga1-xMnxAs structures to enhance the ferromagnetic transition temperature beyond that achieved in randomly doped samples. Our experimental methods also provide a realistic approach to create precise arrangements of single spins as coupled quantum bits for memory or information processing purposes.

Intrinsic and Extrinsic Contributions to the Lattice Parameter of GaMnAs

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Lattice constant in diluted magnetic semiconductors (Ga,Mn)As

Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

Electronic and optical properties of ferromagnetic GaMnAs in a multi-band tight-binding approach

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers

P-Type Codoping Effect in (ga,mn)as: Mn Lattice Location Versus Magnetic Properties

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

GaMnAs with high Mn composition grown in Stranski–Krastanov mode

Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content

Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As

Site Occupation and Electronic-Structure of an Interstitial Mn2+ Impurity in Gap

Structural and magnetic characteristics of MnAs nanoclusters embedded in Be-doped GaAs

Structural Properties and Large Coercivity of Bulk Mn3−xGa (0 ≤ X ≤ 1.15)

Mn Clusterisation in Ga1-Xmnxn

Atom-by-Atom Substitution of Mn in GaAs and Visualization of their Hole-Mediated Interactions

Variation of lattice constant and cluster formation in GaAsBi

Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices

Magnetotransport in the insulating regime of Mn doped GaAs