Abstract:Herein we investigate a (001)-oriented GaAs 1− x Bi x /GaAs structure possessing Bi surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth, through the vapour-liquid-solid mechanism. Specifically, self-aligned “nanotracks” are found to exist trailing the Bi droplets on the sample surface. Through cross-sectional high-resolution transmission electron microscopy the nanotracks are revealed to in fact be elevated above surface by the formation of a subsurface planar nanowire, a structure initiated mid-way through the molecular-beam-epitaxy growth and embedded into the epilayer, via epitaxial overgrowth. Electron microscopy studies also yield the morphological, structural and chemical properties of the nanostructures. Through a combination of Bi determination methods the compositional profile of the film is shown to be graded and inhomogeneous. Furthermore, the coherent and pure zincblende phase property of the film is detailed. Optical characterisation of features on the sample surface is carried out using polarised micro-Raman and micro-photoluminescence spectroscopies. The important light producing properties of the surface nanostructures are investigated through pump intensity-dependent micro-PL measurements, whereby relatively large local inhomogeneities are revealed to exist on the epitaxial surface for important optical parameters. We conclude that such surface effects must be considered when designing and fabricating optical devices based on GaAsBi alloys.

Variation of lattice constant and cluster formation in GaAsBi

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Electronic properties of metamorphic GaSbBi films on GaAs

Epitaxial phases of high Bi content GaSbBi alloys

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Electronic properties of Bi-doped GaAs(001) semiconductors.

Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 -x Bi x alloys

The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Molecular Beam Epitaxy Growth of Gaasbi/Gaas/Algaas Separate Confinement Heterostructures

Molecular beam epitaxy growth and optical properties of high bismuth content GaSb 1-x Bi x thin films

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt

Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots

Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi

Ordering in GaAs co-doped with Bi and N

Reduced thermal conductivity of epitaxial GaAsSb on InP due to lattice mismatch induced biaxial strain

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Novel Ingapbi Single Crystal Grown by Molecular Beam Epitaxy

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

The roles of Bi in InAs and InAsBi nanostructure growth