Abstract:Highly mismatched alloys such as GaNAs demonstrate exotic electronic properties such as the splitting of the conduction bands (CB) into E- and E+ sub-bands, and make them promising for novel application. However, the incorporation of nitrogen atoms in the host GaAs severely degrades the electro-optical properties of this alloy with added challenges of the precise control of the compositions. Here we focus on the effect of Sb doping on the compositional and electro-optical properties of GaNAs thin films grown by molecular beam epitaxy. Sb has enhanced the nitrogen incorporation rate significantly, and the precise control of the group-V atoms (N,As,Sb) is performed using a simple equation based on surface reaction model. While there were no distinguishable effect of Sb addition on the electro-optical properties of the E + bands in GaNAs strained layers studied by laser-modulated photo-reflectance (PR) spectroscopy, marked improvement was observed when Sb was added to lattice-matched GaInNAs thin films. It is revealed that the N incorporation rate in both the GaInNAs and GaNAs system is affected by the Sb adatoms in the same manner. PR spectroscopy also revealed that the impact of Sb addition was significant on the epitaxial quality of the overgrown thin films that accompanied increased abruptness around the GaNAs/GaAs heterointerfaces. While deep localized states dominated the photo-luminescence (PL), and Sb showed only marginal impact on the defect distribution and the PL quality, Sb impact was prominent in improving the transport property of the electron mobility that was ascribed to the reduced potential fluctuation of the E-band. The rate of potential fluctuation reduction was calculated even faster for the E+ sub-bands.

Ordering in GaAs co-doped with Bi and N

First-principles Study of the Effect of BiGa Heteroantisites in GaAs:Bi Alloy

Configuration dependence of band-gap narrowing and localization in dilute GaAs 1 -x Bi x alloys

Structural and optical characterization of dilute Bi-doped GaN nanostructures grown by molecular beam epitaxy

Electronic properties of Bi-doped GaAs(001) semiconductors.

Effect of doping on the intersubband absorption in Si- and Ge-doped GaN/AlN heterostructures

Impact of disorder on the optoelectronic properties of GaN$_y$As$_{1-x-y}$Bi$_x$ alloys and heterostructures

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Influence of B doping and N doping on structure and electronic properties of graphene

Raman Scattering Reveals Strong Lo-Phonon-Hole-Plasmon Coupling in Nominally Undoped Gaasbi: Optical Determination of Carrier Concentration

Correlation of interface structure and optical properties of Ga(N,As) and Ga(As,Bi) based type-II hetero structures

Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers

Variation of lattice constant and cluster formation in GaAsBi

Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

A solid-state NMR and DFT study of compositional modulations in Al x Ga

Influence of non-stoichiometry and local atomic environments on carrier transport in GaAs1 − x − yNxBiy alloys

The effects of growth interruptions in the GaAsBi/InAs/GaAs quantum dots: The emergence of three-phase nanoparticles

Epitaxial phases of high Bi content GaSbBi alloys

Phonon Structures of GaN-based Random Semiconductor Alloys

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Valence band-anticrossing in GaP$_{1-x}$Bi$_{x}$ dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy